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相关论文: Strain effect on power factor in monolayer $\mathr…

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Substitutional doping effectively modulates carrier polarity of semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) like MoS2. Although Fe doping typically induces n-type conductivity in monolayer MoS2, anomalous…

In this work, the electrical and spin properties of monolayer MoSi2X4 (X= N, P, As, and Sb) under vertical strain are investigated. The band structures state that MoSi2N4 is an indirect semiconductor, whereas other compounds are direct…

材料科学 · 物理学 2021-09-22 Shoeib Babaee Touski , Nayereh Ghobadi

The power factor of pure p-type ZnSb has been calculated via ab initio simulations assuming that the carrier concentrations are due to the doping effect of intrinsic zinc vacancies. With a vacancy concentration close to the experimental…

材料科学 · 物理学 2020-02-10 A. Berche , P. Jund

Graphite-like carbon nitride (g-$\mathrm{C_3N_4}$) is considered as a promising candidate for energy materials. In this work, the biaxial strain (-4\%-4\%) effects on piezoelectric properties of g-$\mathrm{C_3N_4}$ monolayer are studied by…

材料科学 · 物理学 2021-02-03 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu

By using first-principles calculations, we investigated the monolayer $ReS_2$ with vacancies under strain engineering, specifically focusing on its energy of formation, band gap, electron density of states, effective mass and optical…

材料科学 · 物理学 2016-11-28 Y. M. Min , L. Z. Liu

Optical excitation typically enhances electrical conduction and low-frequency radiation absorption in semiconductors. We have, however, observed a pronounced transient decrease of conductivity in doped monolayer molybdenum disulfide (MoS2),…

介观与纳米尺度物理 · 物理学 2014-10-22 C. H. Lui , A. J. Frenzel , D. V. Pilon , Y. -H. Lee , X. Ling , G. M. Akselrod , J. Kong , N. Gedik

The influence of mechanical strain on the critical current (Ic) is investigated for MgB2/stainless steel (SUS316) superconducting tapes. The tapes are fabricated by using 'powder in tube' method and deformation process without any heat…

超导电性 · 物理学 2009-11-07 H. Kitaguchi , H. Kumakura , K. Togano

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that…

The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that…

材料科学 · 物理学 2022-06-09 Nayereh Ghobadi , Manouchehr Hosseini , Shoeib Babaee Touski

Application of a significantly large bias voltage to small Bi2Sr2CaCu2O8+x mesa structures leads to persistent doping of the mesas. Here we employ this effect for analysis of the doping dependence of the electronic spectra of Bi-2212 single…

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain…

材料科学 · 物理学 2021-05-11 Felix Carrascoso , Hao Li , Riccardo Frisenda , Andres Castellanos-Gomez

Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free…

材料科学 · 物理学 2013-08-14 Kapildeb Dolui , Ivan Rungger , Stefano Sanvito

Using first principles density functional theory calculations, we show a semimetal to semiconducting electronic phase transition for bulk TiS 2 by applying uniform biaxial tensile strain. This electronic phase transition is triggered by…

材料科学 · 物理学 2015-06-23 Atanu Samanta , Tribhuwan Pandey , Abhishek K. Singh

Within a two-band $k\cdot p$ method we analyze different types of strain for the $K$ valley optical characteristics of a freestanding monolayer MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We predict that circular polarization selectivity for…

介观与纳米尺度物理 · 物理学 2018-10-23 Shahnaz Aas , Ceyhun Bulutay

Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two dimensional semiconductor, as molybdenum disulfide, by…

We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially…

介观与纳米尺度物理 · 物理学 2013-09-11 G. Wang , C. R. Zhu , B. L. Liu , X. Marie , Q. X. Feng , X. X. Wu , H. Fan , P. H. Tan , T. Amand , B. Urbaszek

Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap…

材料科学 · 物理学 2015-06-19 Luqing Wang , Alex Kutana , Boris I. Yakobson

We investigate the effect of 2-dimensional (in-plane) strain on the critical transition temperature TH from the photoexcited hidden state in 1T-TaS$_2$ thin films on different substrates. We also measure the effect of in-plane strain on the…

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent…

材料科学 · 物理学 2015-06-18 Liangzhi Kou , Aijun Du , Changfeng Chen , Thomas Frauenheim

Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic…

介观与纳米尺度物理 · 物理学 2015-06-23 Deniz Çakır , Hasan Sahin , François M. Peeters