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相关论文: Understanding and Control of Bipolar Doping in Cop…

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High-resolution photoemission is used to study the electronic structure of the cuprate superconductor, Bi2212, as a function of hole doping and temperature. A kink observed in the band dispersion in the nodal direction in the…

Cubic boron nitride (cBN) is an ultra-wide bandgap, super-hard material with potential for extreme-temperature and -pressure applications. A proof-of-principle p-n junction using cBN was demonstrated almost three decades ago. However, to…

$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole doping affects…

Bi2Te3 based thermoelectric devices typically use a nickel layer as a diffusion barrier to block the diffusion of solder or copper atoms from the electrode into the thermoelectric material. Previous studies have shown degradation in the…

材料科学 · 物理学 2012-12-05 Kevin C. Lukas , Weishu Liu , Zhifeng Ren , Cyril P. Opeil

Copper and Nickel impurities have been doped into the iron pnictide superconductor Ba0.6K0.4Fe2As2. Resistivity measurements reveal that Cu and Ni impurities suppress superconducting transition temperature T_c with rates of \Delta T_c/Cu-1%…

超导电性 · 物理学 2015-06-15 Peng Cheng , Bing Shen , Fei Han , Hai-Hu Wen

Cu$_3$SbSe$_4$ is a promising thermoelectric material due to high thermopower ($>400\ \mu$V/K) at 300K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of…

材料科学 · 物理学 2014-09-17 Dat T. Do , S. D. Manhanti

The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of…

In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using a first-principles approach, we study the electronic structure, phonon dispersion, and…

材料科学 · 物理学 2024-08-07 Mina Yoon , German D. Samolyuk , Kai Li , James A. Hayne , Tolga Aytug

We report preparation, x-ray diffraction, magnetic susceptibility chi(T) and heat capacity Cp(T) measurements on the undoped samples as also samples with Zn-doped (S = 0) at Cu site, Ni doped (S = 1) at Cu site, and Ca-doped (holes) at Bi…

强关联电子 · 物理学 2012-11-16 B. Koteswararao , A. V. Mahajan , L. K. Alexander , J. Bobroff

We report a study on the growth of NiBi3 nanowires and nanorods during the preparation of superconducting NiBi3 films by co-evaporation of Ni and Bi. We find that NiBi3 films grown via co-evaporation of Ni and Bi metals achieve higher…

超导电性 · 物理学 2023-06-22 Laxmipriya Nanda , Bidyadhar Das , Subhashree Sahoo , Pratap K. Sahoo , Kartik Senapati

We report the measurements of in-plane resistivity, Hall effect, and Nernst effect in Zn doped YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ epitaxial thin films grown by pulsed laser deposition technique. The pseudogap temperature, $T^*$, determined…

超导电性 · 物理学 2009-11-11 Z. A. Xu , J. Q. Shen , S. R. Zhao , Y. J. Zhang , C. K. Ong

This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…

材料科学 · 物理学 2020-04-08 Robert Karsthof , Arthur Markus Anton , Friedrich Kremer , Marius Grundmann

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe-N) thin films. Fe-N thin films with different concentration of Al (Al=0, 2, 3, 6, and 12 at.%) were deposited using dc…

材料科学 · 物理学 2015-05-21 Akhil Tayal , Mukul Gupta , Nidhi Pandey , Ajay Gupta , M. Horisberger , Jochen Stahn

Efforts to understand the microscopic origin of superconductivity in the cuprates are dependent on knowledge of the normal state. The Hall number in the low temperature, high field limit $n_{\rm H}(0)$ has a particular significance because…

The realization of $p$-type doping in wide-band-gap oxide semiconductors remains a major challenge, particularly in $\beta-Ga_2O_3$ where nitrogen has long been considered a potential acceptor dopant but has consistently failed to produce…

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed…

材料科学 · 物理学 2013-12-03 C. W. Rischau , B. Leridon , B. Fauqué , V. Metayer , C. J. van der Beek

The charge transport properties of individual, metallic nitrogen doped, single-walled carbon nanotubes are investigated. It is demonstrated that n-type conduction can be achieved by nitrogen doping. Evidence was obtained by appealing to…

材料科学 · 物理学 2009-11-11 V. Krstic , G. L. J. A. Rikken , P. Bernier , S. Roth , M. Glerup

Bipolar carrier transport is often a limiting factor in the thermoelectric efficiency of narrow bandgap materials at high temperatures due to the reduction in the Seebeck coefficient and the introduction of an additional term to the thermal…

材料科学 · 物理学 2019-03-27 Samuel Foster , Neophytos Neophytou

High-purity cubic silicon carbide possesses the second-highest thermal conductivity among large-scale crystals, surpassed only by diamond, making it crucial for practical applications of thermal management. Recent theoretical studies…

材料科学 · 物理学 2024-09-30 Zifeng Huang , Yunfan Yang , Da Sheng , Hui Li , Yuxiang Wang , Zixuan Sun , Ming Li , Runsheng Wang , Ru Huang , Zhe Cheng

The effects of copper doping on the structural and superconducting phase transitions of Ba(Ni$_{1-x}$Cu$_{x}$)$_{2}$As$_{2}$ were studied by examining the resistivity, magnetic susceptibility, and specific heat. We found an abrupt increase…

超导电性 · 物理学 2017-04-18 Kazutaka Kudo , Masaya Takasuga , Minoru Nohara
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