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Previous works on deformed graphene predict the existence of valley-polarized states, however, optimal conditions for their detection remain challenging. We show that in the quantum Hall regime, edge-like states in strained regions can be…

介观与纳米尺度物理 · 物理学 2020-02-26 D. Faria , C. León , L. R. F. Lima , A. Latgé , N. Sandler

Electron wavefunctions in twisted bilayer graphene may have a strong single layer character or be intrinsically delocalized between layers, with their nature often determined by how energetically close they are to the Dirac point. In this…

介观与纳米尺度物理 · 物理学 2014-10-06 Chi-Ken Lu , H. A. Fertig

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize…

Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…

介观与纳米尺度物理 · 物理学 2023-06-07 Shrushti Tapar , Bhaskaran Muralidharan

The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic…

介观与纳米尺度物理 · 物理学 2013-11-04 Yu Song , Feng Zhai , Yong Guo

Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…

介观与纳米尺度物理 · 物理学 2023-11-02 Fang-Ming Jing , Guo-Quan Qin , Zhuo-Zhi Zhang , Xiang-Xiang Song , Guo-Ping Guo

We study transport across p-n junctions of gapped two-dimensional semi-Dirac materials: nodal semimetals whose energy bands disperse quadratically and linearly along distinct crystal axes. The resulting electronic properties --- relevant to…

介观与纳米尺度物理 · 物理学 2017-07-26 K. Saha , R. Nandkishore , S. A. Parameswaran

The relativistic-like behavior of electrons in graphene significantly influences the interaction properties of these electrons in a quantizing magnetic field, resulting in more stable fractional quantum Hall effect states as compared to…

介观与纳米尺度物理 · 物理学 2015-06-15 Tapash Chakraborty , Vadim Apalkov

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…

介观与纳米尺度物理 · 物理学 2016-01-20 Yuya Shimazaki , Michihisa Yamamoto , Ivan V. Borzenets , Kenji Watanabe , Takashi Taniguchi , Seigo Tarucha

Twisted bilayer graphene gives rise to large moir\'{e} patterns that form a triangular network upon mechanical relaxation. If gating is included, each triangular region has gapped electronic Dirac points that behave as bulk topological…

数学物理 · 物理学 2023-05-26 Guillaume Bal , Paul Cazeaux , Daniel Massatt , Solomon Quinn

We study the conductance of a biased bilayer graphene flake with monolayer nanoribbon contacts. We find that the transmission through the bilayer ribbon strongly depends on the applied bias between the two layers and on the relative…

介观与纳米尺度物理 · 物理学 2011-05-18 J. W. González , H. Santos , E. Prada , L. Brey , L. Chico

Despite many reports of valley-related phenomena in graphene and its multilayers, current transport experiments cannot probe valley phenomena without the application of external fields. Here we propose a gate-defined valley splitter as a…

介观与纳米尺度物理 · 物理学 2025-02-26 Juan Daniel Torres Luna , Kostas Vilkelis , Antonio L. R. Manesco

Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…

介观与纳米尺度物理 · 物理学 2015-08-26 Benjamin J. Wieder , Fan Zhang , C. L. Kane

The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy…

介观与纳米尺度物理 · 物理学 2016-11-03 J. Li , K. Wang , K. J. McFaul , Z. Zern , Y. F. Ren , K. Watanabe , T. Taniguchi , Z. H. Qiao , J. Zhu

We study the electron propagation in a circular electrostatically defined quantum dot in graphene. Solving the scattering problem for a plane Dirac electron wave we identify different scattering regimes depending on the radius and potential…

介观与纳米尺度物理 · 物理学 2015-07-17 C. Schulz , R. L. Heinisch , H. Fehske

We investigate quantum pumping of massless Dirac fermions in an ideal (impurity free) double layer of graphene. The pumped current is generated by adiabatic variation of two gate voltages in the contact regions to a weakly doped double…

介观与纳米尺度物理 · 物理学 2010-12-23 Marnix Wakker , Miriam Blaauboer

Analogous to charge and spin, electrons in solids endows an additional degree of freedom: the valley pseudospin. Two-dimensional hexagonal materials such as graphene exhibit two valleys, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$.…

介观与纳米尺度物理 · 物理学 2022-01-12 M. S. Mrudul , Gopal Dixit

We study the transmission of a quantum particle along a straight input--output line to which a graph $\Gamma$ is attached at a point. In the point of contact we impose a singularity represented by a certain properly chosen scale-invariant…

量子物理 · 物理学 2013-03-22 Ondřej Turek , Taksu Cheon

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…

介观与纳米尺度物理 · 物理学 2014-10-30 Niklas Rohling , Maximilian Russ , Guido Burkard

The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…

强关联电子 · 物理学 2026-05-05 Youngjae Kim