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Avoiding charge density variations and impurities in graphene is vital for high-quality graphene-based devices. Here, we demonstrate an optical method using Raman 2D peak-split to monitor charge density variations in the range 1-25e10 cm-2.…

应用物理 · 物理学 2020-05-12 Zhuofa Chen , Nathan Ullberg , Mounika Vutukuru , David Barton , Anna K Swan

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce…

We show the evolution of Raman spectra with number of graphene layers on different substrates, SiO$_{2}$/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the…

材料科学 · 物理学 2007-10-24 Anindya Das , Biswanath Chakraborty , A. K. Sood

In contrary to the widely reported single and symmetric peak feature of G' (or 2D) band in Raman spectrum of graphene, we herein report the observation of splitting in G' band in free standing graphene. Our experimental findings provide a…

材料科学 · 物理学 2015-06-04 Zhiqiang Luo , Chunxiao Cong , Jun Zhang , Qihua Xiong , Ting Yu

A comparison of experimentally observed Raman scattering data with Raman line-shapes, generated theoretically using phonon confinement model, has been carried out to understand the sensitivity of different Raman spectral parameters on…

介观与纳米尺度物理 · 物理学 2020-03-20 Neeshu K. M. , Chanchal Rani , Ritika Kaushik , Manushree Tanwar , Ashisha Kumar , Rajesh Kumar

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions (EPI) in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with…

材料科学 · 物理学 2022-01-27 Zherui Han , Xiaolong Yang , Sean E. Sullivan , Tianli Feng , Li Shi , Wu Li , Xiulin Ruan

We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is accurately determined from dual-gated Raman measurements,…

介观与纳米尺度物理 · 物理学 2016-08-08 Guillaume Froehlicher , Stéphane Berciaud

A theoretical study describing the coherence properties of near-field Raman scattering in two- and one-dimensional systems is presented. The model is applied to the Raman modes of pristine graphene and graphene edges. Our analysis is based…

介观与纳米尺度物理 · 物理学 2014-03-31 Luiz Gustavo Cançado , Ryan Beams , Ado Jorio , Lukas Novotny

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force…

介观与纳米尺度物理 · 物理学 2015-06-25 D. Graf , F. Molitor , K. Ensslin , C. Stampfer , A. Jungen , C. Hierold , L. Wirtz

Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interest, in particular as a new kind of matter, in which electron…

Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are…

应用物理 · 物理学 2019-08-30 Zhuofa Chen , Nathan Ullberg , Mounika Vutukuru , David Barton , Anna K Swan

Confocal Raman spectroscopy is a versatile, non-invasive investigation tool and a major workhorse for graphene characterization. Here we show that the experimentally observed Raman 2D line width is a measure of nanometer-scale strain…

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect…

Raman spectroscopy plays a key role in studies of graphene and related carbon systems. Graphene is perhaps the most promising material of recent times for many novel applications, including electronics. In this paper, the traditional and…

材料科学 · 物理学 2015-12-07 Eric J. Heller , Yuan Yang , Lucas Kocia , Wei Chen , Shiang Fang , Mario Borunda , Efthimios Kaxiras

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer…

介观与纳米尺度物理 · 物理学 2015-01-13 I. Shlimak , A. Haran , E. Zion , T. Havdala , Yu. Kaganovskii , A. V. Butenko , L. Wolfson , V. Richter , D. Naveh , A. Sharoni , E. Kogan , M. Kaveh

The Raman 2D line of graphene is widely used for device characterization and during device fabrication as it contains valuable information on e.g. the direction and magnitude of mechanical strain and doping. Here we present systematic…

Thermal conduction was explored and discussed through a combined theoretical and simulation approach in this work. The thermal conductivity k of polycrystalline graphene was calculated by molecular dynamics simulations based on a hexagonal…

材料科学 · 物理学 2014-06-05 Yanlei Wang , Zhigong Song , Zhiping Xu

We report the growth of thickness-controlled rotationally faulted multilayer graphene (rf-MLG) on Ni foils by low-pressure chemical vapor deposition and their characterization by micro-Raman spectroscopy. The surface morphology and…

材料科学 · 物理学 2018-09-25 H. Kato , N. Itagaki , H. J. Im

There are several growing methods for graphene. In this study, the growth of graphene-like clusters on the SiC wafers is done by annealing the wafers in a vacuum evaporation system equipped with a heating source accessory. For evaluating…

介观与纳米尺度物理 · 物理学 2021-05-31 Seyed Sajad Sadeghi , Hamidreza Simchi

From the perspective of bond relaxation and vibration, we have reconciled the Raman shifts of graphene under the stimuli of the number-of-layer, uni-axial-strain, pressure, and temperature in terms of the response of the length and strength…

介观与纳米尺度物理 · 物理学 2015-05-30 X. X. Yang , J. W. Li , Z. F. Zhou , Y. Wang , L. W. Yang , W. T. Zheng , Chang Q. Sun