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相关论文: Strong Transport Anisotropy in a Ge/SiGe Quantum W…

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Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate…

介观与纳米尺度物理 · 物理学 2015-11-18 Q. Shi , M. A. Zudov , C. Morrison , M. Myronov

We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the…

介观与纳米尺度物理 · 物理学 2017-12-11 M. Yu. Melnikov , V. T. Dolgopolov , A. A. Shashkin , S. -H. Huang , C. W. Liu , S. V. Kravchenko

We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic}…

介观与纳米尺度物理 · 物理学 2009-10-31 W. Pan , T. Jungwirth , H. L. Stormer , D. C. Tsui , A. H. MacDonald , S. M. Girvin , L. Smrcka , L. N. Pfeiffer , K. W. Baldwin , K. W. West

At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $\nu$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the…

介观与纳米尺度物理 · 物理学 2009-11-07 W. Pan , H. L. Stormer , D. C. Tsui , L. N. Pfeiffer , K. W. Baldwin , K. W. West

We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…

介观与纳米尺度物理 · 物理学 2015-06-25 A. V. Goran , A. A. Bykov , A. K. Bakarov , J. C. Portal

Magnetoresistance data taken along $[\bar{2}33]$ and $[01\bar{1}]$ directions in a GaAs/AlGaAs two-dimensional hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy appears to…

介观与纳米尺度物理 · 物理学 2009-10-31 M. Shayegan , H. C. Manoharan , S. J. Papadakis , E. P. DePoortere

We report low-field magnetotransport data in two-dimensional hole systems in GaAs/AlGaAs heterostructures and quantum wells, in a large density range, $2.5 \times 10^{10} \leq p \leq 4.0 \times 10^{11}$ cm$^{-2}$, with primary focus on…

介观与纳米尺度物理 · 物理学 2009-11-07 S. J. Papadakis , E. P. De Poortere , H. C. Manoharan , J. B. Yau , M. Shayegan , S. A. Lyon

We report on nonlinear transport measurements in a GaAs/AlGaAs quantum well exhibiting a colossal negative magnetoresistance effect. Under applied dc bias, the magnetoresistance becomes nonmonotonic, exhibiting distinct extrema that move to…

介观与纳米尺度物理 · 物理学 2015-06-23 Q. Shi , M. A. Zudov , L. N. Pfeiffer , K. W. West

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at…

介观与纳米尺度物理 · 物理学 2009-11-10 Frank Fischer , Matthew Grayson , Erwin Schuberth , Dieter Schuh , Max Bichler , Gerhard Abstreiter

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum…

A negative magnetoresistance under the in-plane magnetic field, reaching maximum 30-40% of its zero-field value in fields higher than ~12 T, has been found in wide Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum wells (QW) containing the…

介观与纳米尺度物理 · 物理学 2015-06-24 M. V. Yakunin , G. A. Alshanskii , Yu. G. Arapov , V. N. Neverov , O. A. Kuznetsov

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the…

介观与纳米尺度物理 · 物理学 2009-11-11 K. -M. Haendel , R. Winkler , U. Denker , O. G. Schmidt , R. -J. Haug

We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At…

介观与纳米尺度物理 · 物理学 2018-08-29 R. Mizokuchi , R. Maurand , F. Vigneau , M. Myronov , S. De Franceschi

Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2 and nu=11/2 for temperatures below 150mK. In stark contrast, the transport at nu=9/2 is isotropic for…

介观与纳米尺度物理 · 物理学 2007-05-23 M. J. Manfra , Z. Jiang , S. H. Simon , L. N. Pfeiffer , K. W. West , A. M. Sergent

The unsymmetric confinement of the electrons in a typical 2-dimensional electron gas (2DEG) breaks the full cubic symmetry of the in-plane transport properties. A rigorous invariance of the transport under rotation by pi/2 about the cubic…

介观与纳米尺度物理 · 物理学 2007-05-23 Herbert Kroemer

We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…

介观与纳米尺度物理 · 物理学 2021-10-22 Zijin Lei , Erik Cheah , Km Rubi , Maurice E. Bal , Christoph Adam , Rüdiger Schott , Uli Zeitler , Werner Wegscheider , Thomas Ihn , Klaus Ensslin

We study two dimensional hole systems confined to GaAs quantum wells grown on the (311)A surface of GaAs substrates. Such samples exhibit an in-plane mobility anisotropy. At constant 2D hole density, we vary the symmetry of the quantum well…

介观与纳米尺度物理 · 物理学 2009-10-31 S. J. Papadakis , E. P. De Poortere , M. Shayegan

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…

介观与纳米尺度物理 · 物理学 2020-06-04 Truong Van Tuan , Nguyen Quoc Khanh , Vo Van Tai , Dang Khanh Linh

Anisotropic charge transport is observed in a two-dimensional (2D) hole system in a perpendicular magnetic field at filling factors nu=7/2, nu=11/2, and nu=13/2 at low temperature. In stark contrast, the transport at nu=9/2 is isotropic for…

介观与纳米尺度物理 · 物理学 2009-11-13 M. J. Manfra , R. de Picciotto , Z. Jiang , S. H. Simon , L. N. Pfeiffer , K. W. West , A. M. Sergent

We demonstrate by spin quantum beat spectroscopy that in undoped symmetric (110)-oriented GaAs/AlGaAs single quantum wells even a symmetric spatial envelope wavefunction gives rise to an asymmetric in-plane electron Land\'e-g-factor. The…

介观与纳米尺度物理 · 物理学 2015-05-27 J. Hübner , S. Kunz , S. Oertel , D. Schuh , M. Pochwała , H. T. Duc , J. Förstner , T. Meier , M. Oestreich
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