中文
相关论文

相关论文: All-optical dc nanotesla magnetometry using silico…

200 篇论文

Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon…

The possibility of using axial spin color centers with $S=3/2$, oriented along the hexagonal $c$ axis in a silicon carbide (SiC) wafer, has been demonstrated for all-optical measurement of projection of the external magnetic field…

Pressure-induced magnetic phase transition is attracting interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cells. However, detection of the local sample magnetic properties is a great…

We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high…

材料科学 · 物理学 2015-07-21 D. Simin , F. Fuchs , H. Kraus , A. Sperlich , P. G. Baranov , G. V. Astakhov , V. Dyakonov

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. When optical readout of spin states is used, point defects…

We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The…

介观与纳米尺度物理 · 物理学 2018-02-14 S. A. Tarasenko , A. V. Poshakinskiy , D. Simin , V. A. Soltamov , E. N. Mokhov , P. G. Baranov , V. Dyakonov , G. V. Astakhov

We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic…

Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological…

材料科学 · 物理学 2014-07-29 H. Kraus , V. A. Soltamov , F. Fuchs , D. Simin , A. Sperlich , P. G. Baranov , G. V. Astakhov , V. Dyakonov

Shallow nitrogen-vacancy (NV) centers in diamond are promising for nano-magnetometry for they can be placed proximate to targets. To study the intrinsic magnetic properties, zero-field magnetometry is desirable. However, for shallow NV…

介观与纳米尺度物理 · 物理学 2021-09-14 Ning Wang , Chu-Feng Liu , Jing-Wei Fan , Xi Feng , Weng-Hang Leong , Amit Finkler , Andrej Denisenko , Jörg Wrachtrup , Quan Li , Ren-Bao Liu

Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multi-particle symmetry adapted wave functions of the negatively…

介观与纳米尺度物理 · 物理学 2016-03-23 Ö. O. Soykal , Pratibha Dev , Sophia E. Economou

Silicon vacancy in silicon carbide has drawn much attention for various quantum sensing. However, most of the previous experiments are achieved using confocal scanning systems, which limit its applications in practical applications. In this…

量子物理 · 物理学 2023-03-22 Wei-Ke Quan , Lin Liu , Qin-Yue Luo , Xiao-Di Liu , Jun-Feng Wang

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-3/2 semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based…

介观与纳米尺度物理 · 物理学 2017-02-22 Ö. O. Soykal , T. L. Reinecke

We summarize our new scanning magnetic 3-D imaging system. This scanning system uses optically detected magnetic resonance in a single nitrogen vacancy center in a diamond nanocrystal. The theoretical analysis and the first experimental…

介观与纳米尺度物理 · 物理学 2015-05-13 Gennady P. Berman , Boris M. Chernobrod

Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…

介观与纳米尺度物理 · 物理学 2018-09-05 G. Wolfowicz , S. J. Whiteley , D. D. Awschalom

Silicon Carbide is renowned for its exceptional thermal stability, making it a crucial material for high-temperature power devices in extreme environments. While optically detected magnetic resonance in SiC has been widely studied for…

仪器与探测器 · 物理学 2025-06-10 F. Sgrignuoli , I. Viti , Z. G. Yu , E. Allridge , P. Lenahan , S. Goswami , R. Ghandi , M. Aghayan , D. M. Shaddock

A tunable, all-optical, coupling method has been realized for a high-\textit{Q} silica microsphere and an optical waveguide. By means of a novel optical nanopositioning method, induced thermal expansion of an asymmetric microsphere stem for…

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating…

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been…

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large…

‹ 上一页 1 2 3 10 下一页 ›