相关论文: Tetragonal Bismuth Bilayer: A Stable and Robust Qu…

Dual quantum spin Hall insulator (QSHI) is a newly discovered topological state in the 2D material TaIrTe$_4$, exhibiting both a traditional $Z_2$ band gap at charge neutrality point and a van Hove singularity (VHS) induced correlated $Z_2$…

Quantum spin Hall insulators (QSHIs) and excitonic insulators (EIs) are prototypical topological and correlated states of matter, respectively. The topological phase transition between the two has attracted much theoretical interest but…

The search for large gap quantum spin Hall (QSH) and quantum anomalous Hall (QAH) insulators is important both for fundamental and practical interests. The degenerate multi-orbitals $p_x,p_y$ in honeycomb lattice provides a paradigm for QSH…

For potential applications in spintronics and quantum computing, it is desirable to place a quantum spin Hall insulator [i.e., a 2D topological insulator (TI)] on a substrate while maintaining a large energy gap. Here, we demonstrate a…

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless…

Topological insulators host exotic quantum phenomena such as the quantum spin Hall (QSH) effect, which enables dissipationless one-dimensional edge conduction. Realizing such states at room temperature and on a macroscopic scale is…

Quantum Spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III-V monolayers and their halides with chair structure (regular hexagonal…

Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoeletronics. Searching for 2D III-V films with high structural stability and…

The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport…

Quantum spin-Hall insulators (QSHIs), i.e., two-dimensional topological insulators (TIs) with a symmetry-protected band inversion, have attracted considerable scientific interest in recent years. In this work, we have computed the…

Commonly materials are classified as either electrical conductors or insulators. The theoretical discovery of topological insulators (TIs) in 2005 has fundamentally challenged this dichotomy. In a TI, spin-orbit interaction generates a…

Although many possible two-dimensional (2D) topological insulators (TIs) have been predicted in recent years, there is still lack of experimentally realizable 2D TI. Through first-principles and tight-binding simulations, we found an…

Topological insulators are new class of materials which are characterized by a bulk band gap like ordinary band insulator but have protected conducting states on their edge or surface. These states emerge out due to the combination of…

Quantum Spin Hall Insulators (QSHI) have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit coupling and offer the potential for applications in spintronics…

Quantum spin Hall (QSH) insulators, a new class of quantum matters, can support topologically protected helical edge modes inside bulk insulating gap, which can lead to dissipationless transport. A major obstacle to reach wide application…

Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16)…

The quantum-spin-Hall (QSH) phase of 2D topological insulators has attracted increased attention since the onset of 2D materials research. While large bulk gaps with vanishing edge gaps in atomically thin layers have been reported,…

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to…

Topological edge states at the boundary of quantum spin Hall (QSH) insulators hold great promise for dissipationless electron transport. The device application of topological edge states has several critical requirements for the QSH…

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…