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相关论文: Tunable magnetoresistance in an asymmetrically cou…

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We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact…

介观与纳米尺度物理 · 物理学 2015-06-15 Fatemeh Rostamzadeh Renani , George Kirczenow

Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce due to often conflicting requirements of stabilizing both…

介观与纳米尺度物理 · 物理学 2024-12-09 Lihao Zhang , Xiaoyu Wang , Qi Li , Haibo Xie , Liangliang Zhang , Lei Zhang , Jie Pan , Yingchun Cheng , Zhe Wang

We have measured quantum transport through an individual Fe$_4$ single-molecule magnet embedded in a three-terminal device geometry. The characteristic zero-field splittings of adjacent charge states and their magnetic field evolution are…

Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive…

介观与纳米尺度物理 · 物理学 2021-08-25 Yu. G. Naidyuk , D. L. Bashlakov , O. E. Kvitnitskaya , B. R. Piening , G. Shipunov , D. V. Efremov , S. Aswartham , B. Büchner

We theoretically investigate the effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic…

介观与纳米尺度物理 · 物理学 2015-06-18 Xing-Tao An

Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…

材料科学 · 物理学 2020-08-12 Dongzhe Li , Fabian Pauly , Alexander Smogunov

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be…

介观与纳米尺度物理 · 物理学 2025-12-04 Xiaolin Ren , Ruizi Liu , Yiyang Zhang , Yuting Liu , Xuezhao Wu , Kun Qian , Kenji Watanabe , Takashi Taniguchi , Qiming Shao

Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal…

材料科学 · 物理学 2013-05-29 M. AlHajDarwish , H. Kurt , S. Urazhdin , A. Fert , R. Loloee , W. P. Pratt , J. Bass

A domain wall in a ferromagnetic one-dimensional nanowire experiences current induced motion due to its coupling with the conduction electrons. When the current is not sufficient to drive the domain wall through the wire, or it is confined…

介观与纳米尺度物理 · 物理学 2012-07-13 Nicholas Sedlmayr , Jamal Berakdar

The recently suggested mechanism [Y. Song and H. Dery, Phys. Rev. Lett. 113, 047205 (2014)] of the three-terminal spin transport is based on the resonant tunneling of electrons between ferromagnetic and normal electrodes via an impurity.…

介观与纳米尺度物理 · 物理学 2016-02-05 Z. Yue , M. E. Raikh

Due to the charge neutral and localized nature of surface Majorana modes, detection schemes usually rely on local spectroscopy or interference through the Josephson effect. Here, we theoretically study the magnetic response of a…

超导电性 · 物理学 2018-09-20 Luca Chirolli , Francisco Guinea

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…

介观与纳米尺度物理 · 物理学 2017-02-15 Maria Stamenova , Razie Mohebbi , Jamileh Seyedyazdi , Ivan Rungger , Stefano Sanvito

Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the…

强关联电子 · 物理学 2012-02-02 I. Shlimak , A. Butenko , D. I. Golosov , K. -J. Friedland , S. V. Kravchenko

The nature of magnetization reversal in an isolated cylindrical nanomagnet has been studied employing time-resolved magnetoresistance measurement. We find that the reversal mode is highly stochastic, occurring either by multimode or…

介观与纳米尺度物理 · 物理学 2015-05-20 Soumik Mukhopadhyay , Amrita Singh , Arindam Ghosh

We study a high-TC superconducting (YBa2Cu3O7-d) / ferromagnetic (Co/Pt multilayer) hybrid which exhibits resistance switching driven by the magnetic history: depending on the direction of the external field, a pronounced decrease or…

Magnetization and torque measurements were performed on CeCoIn$_5$ single crystals to study the mixed-state thermodynamics. These measurements allow the determination of both paramagnetic and vortex responses in the mixed-state…

强关联电子 · 物理学 2009-11-13 H. Xiao , T. Hu , T. A. Sayles , M. B. Maple , C. C. Almasan

We present a rectifying manganite-titanate heterojunction exhibiting a magnetic field tunable depletion layer. This creates a large positive magnetocapacitance, a direct measure of the field-induced reduction of the effective depletion…

强关联电子 · 物理学 2009-11-10 N. Nakagawa , M. Asai , Y. Mukunoki , T. Susaki , H. Y. Hwang

Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic…

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages…

介观与纳米尺度物理 · 物理学 2018-04-04 Si-Yu Li , Haiwen Liu , Jia-Bin Qiao , Hua Jiang , Lin He