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The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Using a Green's function approach, we study phonon-mediated superconducting pairing symmetries that may arise in bilayer graphene where the monolayers are displaced in-plane with respect to each other. We consider a generic coupling…

材料科学 · 物理学 2019-04-26 Mohammad Alidoust , Morten Willatzen , Antti-Pekka Jauho

We show within a local self-consistent mean-field treatment that a random distribution of magnetic adatoms can open a robust gap in the electronic spectrum of graphene. The electronic gap results from the interplay between the nature of the…

强关联电子 · 物理学 2011-10-11 T. G. Rappoport , M. Godoy , B. Uchoa , R. R dos Santos , A. H. Castro Neto

We present a numerical approach for the solution of electromagnetic scattering from a dielectric cylinder partially covered with graphene. It is based on a classical Fourier-Bessel expansion of the fields inside and outside the cylinder to…

光学 · 物理学 2025-03-07 Youssef Jeyar , Mauro Antezza , Brahim Guizal

We construct an analytic continuum model to describe the electronic structure and the electron-phonon interaction in twisted bilayer graphenes with arbitrary lattice deformation. Starting from the tight-binding model, we derive the…

介观与纳米尺度物理 · 物理学 2020-05-20 Mikito Koshino , Nguyen N. T. Nam

Bilayer graphene has two non-equivalent sublattices and, therefore, the same adatom impurity can manifest in spectrally distinct ways-sharp versus broad resonances near the charge neutrality-depending on the sublattice it adsorbs at.…

介观与纳米尺度物理 · 物理学 2022-05-13 Michael Barth , Jacob Fuchs , Denis Kochan

We present a detailed numerical study of the electronic properties of single-layer graphene with resonant ("hydrogen") impurities and vacancies within a framework of noninteracting tight-binding model on a honeycomb lattice. The algorithms…

介观与纳米尺度物理 · 物理学 2010-09-29 Shengjun Yuan , Hans De Raedt , Mikhail I. Katsnelson

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging…

In this work we carry out a theoretical study of the phonon-induced resistivity in twisted double bilayer graphene (TDBG), in which two Bernal-stacked bilayer graphene devices are rotated relative to each other by a small angle $\theta$. We…

强关联电子 · 物理学 2020-06-30 Xiao Li , Fengcheng Wu , S. Das Sarma

We study the variations of electron-phonon coupling and their spectroscopic consequences in response to sliding of two layers in bilayer graphene using first-principles calculations and a model Hamiltonian. Our study shows that the long…

介观与纳米尺度物理 · 物理学 2013-07-25 Seon-Myeong Choi , Seung-Hoon Jhi , Young-Woo Son

We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and…

介观与纳米尺度物理 · 物理学 2013-07-19 Alexandr I. Cocemasov , Denis L. Nika , Alexander A. Balandin

The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the…

介观与纳米尺度物理 · 物理学 2018-12-19 Felix Herziger , Christoph Tyborski , Oliver Ochedowski , Marika Schleberger , Janina Maultzsch

We report a comprehensive study of the tuning with electric fields of the resonant magneto-exciton optical phonon coupling in gated graphene. For magnetic fields around $B \sim 25$ T which correspond to the range of the fundamental…

介观与纳米尺度物理 · 物理学 2014-05-14 P. Leszczynski , Z. Han , A. A. L. Nicolet , B. A. Piot , P. Kossacki , M. Orlita , V. Bouchiat , D. M. Basko , M. Potemski , C. Faugeras

The manipulation of the electron spin degree of freedom is at the core of the spintronics paradigm, which offers the perspective of reduced power consumption, enabled by the decoupling of information processing from net charge transfer.…

介观与纳米尺度物理 · 物理学 2010-11-16 Paolo Michetti , Patrik Recher , Giuseppe Iannaccone

Twisted trilayer graphene is a particularly promising moir\'e superlattice system, due to its tunability, strong superconductivity, and complex electronic symmetry breaking. Motivated by these properties, we study lattice relaxation and the…

介观与纳米尺度物理 · 物理学 2022-12-23 Rhine Samajdar , Yanting Teng , Mathias S. Scheurer

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…

Graphene-based systems have emerged as a rich platform for exploring emergent quantum phenomena-including superconductivity, magnetism, and correlated insulating behavior-arising from flat electronic bands that enhance many-body…

介观与纳米尺度物理 · 物理学 2026-02-19 Xinyu Cai , Fengfan Ren , Qiao Li , Yanran Shi , Yifan Wang , Yifan Zhang , Zhenghang Zhi , Jiawei Luo , Yulin Chen , Jianpeng Liu , Xufeng Kou , Zhongkai Liu

Synthetic platforms afford an unparalleled degree of controllability in realizing strongly-correlated phases of matter. In this work, we study the possibility of electrically tunable exciton-mediated superconductivity arising in…

强关联电子 · 物理学 2026-01-09 Ajesh Kumar , Adarsh S. Patri , T. Senthil

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…

介观与纳米尺度物理 · 物理学 2009-03-09 H. Schmidt , T. Luedtke , P. Barthold , E. McCann , V. I. Falko , R. J. Haug