相关论文: Implications of Burn-In Stress on NBTI Degradation
Bias Temperature Instability (BTI) is a major reliability concern in CMOS technology, especially with High dielectric constant (High-\k{appa}/HK) metal gate (MG) transistors. In addition, the time independent process induced variation has…
Memory designs require timing margins to compensate for aging and fabrication process variations. With technology downscaling, aging mechanisms became more apparent, and larger margins are considered necessary. This, in return, means a…
Back-end-of-line (BEOL) logic integration is emerging as a complementary scaling path to supplement front-end-of-line (FEOL) Silicon. Among various options for BEOL logic, Carbon Nanotube Field-Effect Transistors (CNFETs) have been…
Negative Biased Temperature Instability (NBTI)-induced aging is one of the critical reliability threats in nano-scale devices. This paper makes the first attempt to study the NBTI aging in the on-chip weight memories of deep neural network…
This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demonstrated that MS induces a positive Vth shift in the device…
Current-steering (CS) digital-to-analog converters (DACs) generate analog signals by combining weighted current sources. Ideally, the current sources are combined at each switching instant simultaneously. However, this is not true in…
The assessment of noise margins and the related probability of failure in digital cells has growingly become essential, as nano-scale CMOS and FinFET technologies are confronting reliability issues caused by aging mechanisms, such as NBTI,…
We propose a novel digital-to-analog converter (DAC) weighting architecture that statistically minimizes the distortion caused by random timing mismatches among current sources. To decode the DAC input codewords into corresponding DAC…
This paper presents OptGM, an optimized gate merging method designed to mitigate negative bias temperature instability (NBTI) in digital circuits. First, the proposed approach effectively identifies NBTI-critical internal nodes, defined as…
Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…
After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reaction-diffusion models, is built around the idea that hydrogen…
Reliability management is one of the primary concerns in manycore systems design. Different aging mechanisms such as Negative-Bias Temperature Instability (NBTI), Electromigration (EM), and thermal cycling can reduce the reliability of…
The front-illuminated (FI) CCDs in the Advanced CCD Imaging Spectrometer (ACIS) on the Chandra X-ray Observatory (Chandra) were damaged in the extreme environment of the Earth's radiation belts, causing charge traps that result in enhanced…
At the 3 GeV ring of the MAX IV Laboratory, a fourth generation ring-based synchrotron light source, an asymmetric influence of the sign of the amplitude-dependent tune shift (ADTS) on the transverse mode-coupling instability (TMCI) has…
Negative-Bias Temperature Instability is a dominant aging mechanism in nanoscale CMOS circuits such as microprocessors. With this aging mechanism, the rate of device aging is dependent not only on overall operating conditions, such as heat,…
Neuromorphic hardware with non-volatile memory (NVM) can implement machine learning workload in an energy-efficient manner. Unfortunately, certain NVMs such as phase change memory (PCM) require high voltages for correct operation. These…
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
Reliability has become an increasing concern in modern computing. Integrated circuits (ICs) are the backbone of modern computing devices across industries, including artificial intelligence (AI), consumer electronics, healthcare,…
With the increasing digital services demand, performance and power-efficiency become vital requirements for digital circuits and systems. However, the enabling CMOS technology scaling has been facing significant challenges of device…