相关论文: Nanoscale Phase Change Memory with Graphene Ribbon…
Graphene nanoribbons (GNRs) are one-dimensional nanostructures predicted to display a rich variety of electronic behaviors. Depending on their structure, GNRs realize metallic and semiconducting electronic structures with band gaps that can…
The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has…
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness.…
We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width and polarization…
We investigate the effects of long-range potential fluctuations and electron-electron interactions on electronic and magnetic properties of graphene nanoribbons with zigzag edges using an extended mean-field Hubbard model. We show that…
Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks. These…
We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions…
The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a…
Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width…
Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room…
High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene are experimentally realized. Graphene electronic properties can be significantly modulated by the double side-gates. The modulation effects are very…
Resistive Random Access Memory (RRAM) and Phase Change Memory (PCM) devices have been popularly used as synapses in crossbar array based analog Neural Network (NN) circuit to achieve more energy and time efficient data classification…
Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to…
In this work we introduce a compact model for mushroom-type phase-change memory devices that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and…
In this paper we report phase modulation obtained by inducing a capacitive charge on graphene layers embedded in the core of a waveguide. There is a biasing regime in which graphene absorption is negligible but large index variations can be…
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However,…
Vertical graphene nanosheets (VGNs) are the material of choice for next-generation electronic device applications. The growing demand for flexible devices in electronic industry brings in restriction on growth temperature of the material of…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
We propose an analytical framework to design actively tunable narrowband thermal emitters at infrared frequencies. We exemplify the proposed design rules using phase-change materials (PCM), considering dielectric-to-dielectric PCMs (e.g.…
Recent advances in neuroscience together with nanoscale electronic device technology have resulted in huge interests in realizing brain-like computing hardwares using emerging nanoscale memory devices as synaptic elements. Although there…