相关论文: Multiple-stable anisotropic magnetoresistance memo…

Experimental measurements show that the angular dependence of the anisotropic magnetoresistance (AMR) in L1$_0$ ordered FePt epitaxial films on the current orientation and magnetization direction is a superposition of the corresponding…

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…

Anisotropic magnetoresistance (AMR) arises from symmetry lowering of the conductivity tensor induced by magnetic order. In simple ferromagnets, AMR is a relativistic effect, relying on spin-orbit interaction (SOC). Here, we demonstrate that…

Altermagnets, a newly discovered class of magnets, integrate the advantages of both ferromagnets and antiferromagnets, such as enabling anomalous transport without stray fields and supporting ultrafast spin dynamics, offering exciting…

Magnetic anisotropies have key role to taylor magnetic behavior in ferromagnetic systems. Further, they are also essential elements to manipulate the thermoelectric response in Anomalous Nernst (ANE) and Longitudinal Spin Seebeck systems…

The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride…

Magnetoelectric composites are an important class of multiferroic materials that pave the way towards a new generation of multifunctional devices directly integrable in data storage technology and spintronics. This study focuses on…

High-order anisotropic magnetoresistance (AMR) is observed up to the 18th harmonic in cubic Fe(001) thin films, overturning the long-standing paradigm that only two- and four-fold terms are symmetry-allowed. Using angle-resolved transport…

Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in…

We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools…

A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…

The magnetic correlations in the austenite phase and the consequent martensitic transition in inverse magnetocaloric alloys, Ni$_{2}$Mn$_{1+x}$Sn$_{1-x}$, have been a matter of debate for decades. We conclusively establish using {\it ab…

Voltage driven magneto-electric (ME) switching of ferro-magnets has shown potential for future low-energy spintronic memories. In this paper, we first analyze two different ME devices viz. ME-MTJ and ME-XNOR device with respect to…

Antiferromagnetic resonance in a bulk $\alpha$-MnTe crystal is investigated using both frequency-domain and time-domain THz spectroscopy techniques. At low temperatures, an excitation at the photon energy of $(3.5\pm 0.1)$~meV is observed…

$\alpha$-MnTe is an antiferromagnetic semiconductor with above room temperature $T_N$ = 310 K, which is promising for spintronic applications. Recently, it was reported to be an altermagnet, containing bands with momentum-dependent spin…

The out-of-plane resistivity ($\rho_c$) and magnetoresistivity (MR) are studied in antiferromangetic (AF) $Nd_{2-x}Ce_xCuO_{4}$ single crystals, which have three types of noncollinear antiferromangetic spin structures. The apparent…

Magneto-structural instability in the ferromagnetic shape memory alloy of composition Ni$_2$Mn$_{1.4}$Sn$_{0.6}$ is investigated by transport and magnetic measurements. Large negative magnetoresistance is observed around the martensitic…

We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic {\gamma} -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For {\gamma} -IrMn3/YIG, the EAMR and the AHLE resistivity…