相关论文: Multilayer Layer Graphene Nanoribbon Flash Memory:…

Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction…

We calculate the transport properties of multilayer graphene, considering the effect of multisubband scattering in a high density regime, where higher subbands are occupied by charge carriers. To calculate the conductivity of multilayer…

With the further scaling of silicon MOSFETs becoming increasingly harder, the search for an alternative material became crucial. The electron device community found many of the answers in two dimensional materials, especially graphene. With…

Recurrent neural network (RNN) has been widely studied in sequence learning tasks, while the mainstream models (e.g., LSTM and GRU) rely on the gating mechanism (in control of how information flows between hidden states). However, the…

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

This paper presents, NeuroTrainer, an intelligent memory module with in-memory accelerators that forms the building block of a scalable architecture for energy efficient training for deep neural networks. The proposed architecture is based…

We study sequential tunneling of magnetic excitations in nonitinerant systems (either magnons or spinons) through triangular molecular magnets. It is known that the quantum state of such molecular magnets can be controlled by application of…

Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with…

By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano-devices were obtained. The scattering properties were then used with an adaptation of…

Graph Neural Networks (GNNs) are widely used today in recommendation systems, fraud detection, and node/link classification tasks. Real world GNNs continue to scale in size and require a large memory footprint for storing graphs and…

This paper proposes an architecture that integrates neural networks (NNs) and hardware security modules using a single resistive random access memory (RRAM) crossbar. The proposed architecture enables using a single crossbar to implement…

The basic building blocks for Resonant Tunnelling Diode (RTD) logic circuits are Threshold Gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, threshold gates can be…

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…

Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…

It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…

We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at…

This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…

We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…

On-chip learning in a crossbar array based analog hardware Neural Network (NN) has been shown to have major advantages in terms of speed and energy compared to training NN on a traditional computer. However analog hardware NN proposals and…