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Improvement in magnetic and electrical properties of multiferroic BiFeO$_3$ in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation,…

介观与纳米尺度物理 · 物理学 2016-07-04 Mehedi Hasan , M. A. Hakim , M. A. Basith , Md. Sarowar Hossain , Bashir Ahmmad , M. A. Zubair , A. Hussain , Md. Fakhrul Islam

This study investigates the photocatalytic nitrogen fixation on a cation-doped surface (Bi$_{x}$M$_{y}$)$_2$MoO$_6$ where (M = Fe, La, Yb) in both the orthorhombic and monoclinic configurations using a density functional theory (DFT)…

材料科学 · 物理学 2018-12-13 Alhassan S. Yasin , Botong Liu , Nianqiang Wu , Terence Musho

We determine the optimal conditions to achieve topological superconducting phases having spin-singlet pairing for a planar nanowire with finite lateral width in the presence of an in-plane external magnetic field. We employ a microscopic…

超导电性 · 物理学 2019-09-25 C. A. Perroni , V. Cataudella , M. Salluzzo , M. Cuoco , R. Citro

In this paper we investigate the intercalation effects of Iron (Fe) in the van der Waals gap of Bi$_2$Se$_3$ on the magnetic and transport properties using first-principles band structure estimations combined using dynamical mean-field…

强关联电子 · 物理学 2019-12-24 S. Koley , Saurabh Basu

BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71o domain walls. A smaller amount of 109o domain walls are also…

材料科学 · 物理学 2012-10-17 S. Farokhipoor , B. Noheda

The diverse functionality emerging at oxide interfaces calls for a fundamental understanding of the mechanisms and control parameters of electronic reconstructions. Here, we explore the evolution of electronic phases in…

强关联电子 · 物理学 2015-01-19 David Doennig , Rossitza Pentcheva

We studied the oxygen vacancies($V_{O}$) in rutile TiO2 by using $G_0W_0$ approximation on top of GGA+$U$ as a method of choice to improve the gap. Since there is no extensive agreement regarding the characteristic of electron localization…

强关联电子 · 物理学 2010-12-30 Ali Kazempour , Seyed Javad Hashemifar , Hadi Akbarzadeh

Defects such as oxygen vacancy are widely considered to be critical for the performance of HfO2-based devices, and yet atomistic mechanisms underlying various exotic effects such as wake-up and fluid imprint remain elusive. Here, guided by…

材料科学 · 物理学 2023-03-03 Liyang Ma , Shi Liu

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence…

The exchange interactions and magnetic structure in layered system CuMnO2 (mineral crednerite) and in nonstoichiometric system Cu1.04Mn0.96O2, with triangular layers distorted due to orbital ordering of the Mn3+ ions, are studied by…

强关联电子 · 物理学 2014-01-21 A. V. Ushakov , S. V. Streltsov , D. I. Khomskii

We report the formation of a novel ferromagnetic state in the antiferromagnet BiFeO3 at the interface with La0.7Sr0.3MnO3. Using x-ray magnetic circular dichroism at Mn and Fe L2,3-edges, we discovered that the development of this…

While defects such as oxygen vacancies in correlated materials can modify their electronic properties dramatically, understanding the microscopic origin of electronic correlations in materials with defects has been elusive. Lanthanum…

强关联电子 · 物理学 2021-02-24 Xingyu Liao , Vijay Singh , Hyowon Park

Understanding the structure of ZnO surface reconstructions and their resultant properties is crucial to the rational design of ZnO-containing devices ranging from optoelectronics to catalysts. Here, we are motivated by recent experimental…

材料科学 · 物理学 2017-02-02 Ryan Jacobs , Bing Zheng , Brian Puchala , Paul M. Voyles , Andrew B. Yankovich , Dane Morgan

Oxygen vacancies are a common source of excess electrons in complex oxides. In Mott insulators these additional electrons can induce a metal-insulator transition (MIT), fundamentally altering the electronic properties of the system. Here we…

强关联电子 · 物理学 2019-09-04 Jaime Souto-Casares , Nicola A. Spaldin , Claude Ederer

Memristive switching in polycrystalline materials is widely attributed to the formation and rupture of conducting filaments, believed to be mediated by oxygen-vacancy redistribution. The underlying atomic-scale processes are still unknown,…

Effect of an internal chemical pressure on structural, optical, magnetic and electrical properties in Bi0.9RE0.1FeO3 Ceramics (RE =Gd3+,Tb3+,Dy3+)has been studied extensively. Some of the highlights are as follows; 1. Coexistence of…

材料科学 · 物理学 2012-06-26 T. Karthik , T. Durga Rao , A. Srinivas , Saket Asthana

We provide a systematic study on the electronic structure of a series of Ta$_2$O$_5$ polymorphs using standard density functional theory (DFT) calculations as well as the more accurate many-body perturbation theory within the GW…

材料科学 · 物理学 2025-02-18 Hui-Min Tang , Yong Yang

First principles calculations were performed to study the ground state electronic properties of BaFeO3 (BFO) within the density functional theory (DFT). Adopting generalized gradient approximation (GGA) exchange and correlation functional…

材料科学 · 物理学 2007-05-23 Hong-Jian Feng , Fa-Min Liu

It was recently discovered that a conductive, metallic state is formed on the surface of some insulating oxides. Firstly observed on SrTiO$_3$(001), it was then found in other compounds as diverse as anatase TiO$_2$, KTaO$_3$, BaTiO$_3$,…

强关联电子 · 物理学 2020-08-26 A. F. Santander-Syro , J. Dai , T. C. Rödel , E. Frantzeskakis , F. Fortuna , R. Weht , M. J. Rozenberg

By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low…

介观与纳米尺度物理 · 物理学 2015-06-04 Peng Wei , Zhiyong Wang , Xinfei Liu , Vivek Aji , Jing Shi