相关论文: Room temperature write-read operations in antiferr…
Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven {\pi}/2 rotation of the N\'eel vector. Nonvolatile, voltage-controlled N\'eel vector…
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work,…
The crystal and magnetic structures of single-crystalline hexagonal LuFeO$_3$ films have been studied using x-ray, electron and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the…
The magnetic properties of $\alpha$-NaFeO$_2$ are studied by neutron diffraction and magnetization measurements. An ordered phase with spins aligned along the b$_hex$ axis exists at low temperatures (T < 4 K). At intermediate temperatures…
In multiferroic BiFeO$_3$ a cycloidal antiferromagnetic structure is coupled to a large electric polarization at room temperature, giving rise to magnetoelectric functionality that may be exploited in novel multiferroic-based devices. In…
We report low-temperature calorimetric, magnetic and resistivity measurements on the antiferromagnetic (AF) heavy-fermion metal YbRh$_2$Si$_2$ (${T_N =}$ 70 mK) as a function of magnetic field $B$. While for fields exceeding the critical…
Taking the pseudobinary C15-Laves phase compound Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$ as a paradigm for studying a ferromagnetic(FM) to antiferromagnetic(AFM) phase transition, we present interesting thermomagnetic history effects in…
Neutron diffraction measurements on multiferroic LuFe2O4 show changes in the antiferromagnetic (AFM) structure characterized by wavevector q = (1/3 1/3 1/2) as a function of electric field cooling procedures. The increase of intensity from…
We perform density functional calculations to investigate the structure of the inter-metallic alloy FeRh under epitaxial strain. Bulk FeRh exhibits a metamagnetic transition from a low-temperature antiferromagnetic (AFM) phase to a…
Previous experiments in compensated magnets have demonstrated a potential for approaching the limit of fastest and least-dissipative operation of digital memory bits. However, the analog route has been virtually unexplored at (sub)ps time…
The coexistence and coupling of magnetic and ferroelectric orderings in single phase multiferroics has evinced enormous scientific interest as it involves breaking of time reversal and space inversion symmetries in the same material. The…
Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most…
We report on the specific heat studies performed on a new generation of CeRh$_2$As$_2$ single crystals. Superior quality of the samples and dedicated experimental protocol allowed us to observe an antiferromagnetic-like behavior in the…
BaMn2As2 is a local-moment antiferromagnetic insulator with a N\'eel temperature of 625 K and a large ordered moment of 3.9 Bohr magneton per Mn. Remarkably, this compound can be driven metallic by the substitution of as little as 1.6% K…
The ferroelectric nematic phase (NF) is a recently discovered phase of matter in which the orientational order of the conventional nematic liquid crystal state is augmented with polar order. Atomistic simulations suggest that the polar NF…
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
We demonstrate low energy, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…
X-ray diffraction experiments were performed on polycrystalline and single-crystal specimens of Ce$_{2}$Fe$_{17}$ at temperatures between 10 K and 300 K. Below $T_{\mathrm{t}}$ = 118$\pm$2 K, additional weak superstructure reflections were…