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相关论文: Comparative study of the two-phonon Raman bands of…

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A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are…

介观与纳米尺度物理 · 物理学 2008-12-16 L. M. Malard , D. C. Elias , E. S. Alves , M. A. Pimenta

The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra…

介观与纳米尺度物理 · 物理学 2014-12-17 Valentin N. Popov , Philippe Lambin

We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1…

材料科学 · 物理学 2019-01-04 Gergő Kukucska , Viktor Zólyomi , János Koltai

Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to…

We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785nm has a complex line-shape mainly due…

We show how the magneto-phonon resonance, particularly pronounced in sp2 carbon allotropes, can be used as a tool to probe the band structure of multilayer graphene specimens. Even when electronic excitations cannot be directly observed,…

介观与纳米尺度物理 · 物理学 2012-09-11 C. Faugeras , P Kossacki , A. A. L. Nicolet , M. Orlita , M Potemski , A. Mahmood , D. M. Basko

We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional…

介观与纳米尺度物理 · 物理学 2011-07-26 Pedro Venezuela , Michele Lazzeri , Francesco Mauri

We compare the main feature of the measured Raman scattering spectra from single layer graphene with a bilayer in which the two layers are arbitrarily misoriented. The profiles of the 2D bands are very similar having only one component,…

介观与纳米尺度物理 · 物理学 2009-11-13 Philippe Poncharal , Anthony Ayari , Thierry Michel , Jean-Louis Sauvajol

The stacking faults (deviates from Bernal) will break the translational symmetry of multilayer graphenes and modify their electronic and optical behaviors to the extent depending on the interlayer coupling strength. This paper addresses the…

材料科学 · 物理学 2015-05-13 Zhenhua Ni , Lei Liu , Yingying Wang , Zhe Zheng , Lain-Jong Li , Ting Yu , Zexiang Shen

We present a detailed calculation of intensities of two-phonon and four-phonon Raman peaks in graphene. Writing the low-energy hamiltonian of the interaction of electrons with the crystal vibrations and the electromagnetic field from pure…

材料科学 · 物理学 2009-11-13 D. M. Basko

In this work we study the behavior of the optical phonon modes in bilayer graphene devices by applying top gate voltage, using Raman scattering. We observe the splitting of the Raman G band as we tune the Fermi level of the sample, which is…

介观与纳米尺度物理 · 物理学 2012-06-07 D. L. Mafra , P. Gava , L. M. Malard , R. S. Borges , G. G. Silva , J. A. Leon , F. Plentz , F. Mauri , M. A. Pimenta

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…

介观与纳米尺度物理 · 物理学 2015-03-19 Duhee Yoon , Young-Woo Son , Hyeonsik Cheong

An experimental study of Raman scattering in N-layer graphene as a function of the top layer doping is reported. At high doping level, achieved by a CHF_3 plasma treatment, we observe a splitting of the $G$ band in the spectra of bilayer…

介观与纳米尺度物理 · 物理学 2010-03-23 M. Bruna , S. Borini

The 1+1 layer folded graphene sheets that deviate from AB stacking are successfully fabricated and their electronic structures are investigated by Raman spectroscopy. Significant blue shift of the 2D band of folded graphene compared to that…

材料科学 · 物理学 2009-11-13 Zhenhua Ni , Yingying Wang , Ting Yu , Yumeng You , Zexiang Shen

We study theoretically the Raman spectrum of the rotated double-layer graphene, consisting of two graphene layers rotated with respect to each other by an arbitrary angle \theta. We find a relatively simple dependence of the Raman G peak…

介观与纳米尺度物理 · 物理学 2013-11-05 Sinisa Coh , Liang Z. Tan , Steven G. Louie , Marvin L. Cohen

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors,…

材料科学 · 物理学 2015-06-04 Sarah Goler , Jun Yan , Vittorio Pellegrini , Aron Pinczuk

Using full potential density functional calculations within local density approximation (LDA), we report our investigation of the structural electronic properties of silicene (the graphene analogue of silicon), the strips of which has been…

介观与纳米尺度物理 · 物理学 2012-01-06 Harihar Behera , Gautam Mukhopadhyay

We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at…

We report the observation of an intense anomalous peak at 1608 cm$^{-1}$ in the Raman spectrum of graphene associated to the presence of chromium nanoparticles in contact with graphene. Bombardment with an electron beam demonstrates that…

First-principles calculations of the electronic structure and vibrational modes, in a system of graphene bilayers and trilayers intercalated with alkaline earth atoms, are resented. It is found that, in similarity to the case of…

超导电性 · 物理学 2011-07-12 R. A. Jishi , D. M. Guzman , H. M. Alyahyaei
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