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By means of a Wannier projection within the framework of density functional theory, we are able to identify the modified c-axis hopping and the energy mismatch between the cation bands as the main source of the $t_{2g}$ splitting around the…

强关联电子 · 物理学 2015-03-20 Zhicheng Zhong , Philipp Wissgott , Karsten Held , Giorgio Sangiovanni

We theoretically investigate the anisotropic dispersion features of a two dimensional electron gas at the (110) oriented $\mathrm{LaAlO}_3/\mathrm{SrTiO}_3$ interfaces, as revealed by scanning gate microscopy of electronic flow from a…

介观与纳米尺度物理 · 物理学 2025-09-30 M. P. Nowak , M. Zegrodnik , D. Grzelec , B. Szafran , R. Citro , P. Wójcik

We study plasmon modes of the two-dimensional electron gas residing at the interface of band insulators $\rm{LaAlO_3}$ and $\rm{SrTiO_3}$ (LAO/STO) and the plasmon excitations of graphene-LAO/STO double layer as well. Considering the…

介观与纳米尺度物理 · 物理学 2017-04-20 Azadeh Faridi , Reza Asgari

Two-dimensional electron gases (2DEGs) formed at complex oxide interfaces offer a unique platform to engineer quantum nanostructures. However, scalable fabrication of locally addressable devices in these materials remains challenging. Here,…

The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of multiple orbital populations, tailoring the interfacial…

The emerging field of complex oxide interfaces is generically built on one of the most celebrated substrates - strontium titanate (SrTiO3). This material hosts a range of phenomena, including ferroelasticity, incipient ferroelectricity, and…

介观与纳米尺度物理 · 物理学 2013-12-13 Maayan Honig , Joseph A. Sulpizio , Jonathan Drori , Arjun Joshua , Eli Zeldov , Shahal Ilani

The emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here we show, by soft X-ray angle-resolved photoemission spectroscopy, that the interfacial…

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field,…

强关联电子 · 物理学 2012-08-21 A. Rastogi , J. J. Pulikkotil , S. Auluck , Z. Hossain , R. C. Budhani

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation…

When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as…

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic…

The effects of atomic-scale disorder and charge (de)localization holds significant importance,and they provide essential insights in unravelling the role that strong and weak correlations play in condensed matter systems.For perovskite…

The polar interface between LaAlO$_{3}$ and SrTiO$_{3}$ has shown promise as a field effect transistor, with reduced (nanoscale) feature sizes and potentially added functionality over conventional semiconductor systems. However, the…

介观与纳米尺度物理 · 物理学 2011-05-18 N. C. Bristowe , P. B. Littlewood , Emilio Artacho

In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar…

Understanding the role of defects in oxide heterostructures is crucial for future materials control and functionalization. We hence study the impact of oxygen vacancies (OVs) at variable concentrations on orbital- and spin exchange in the…

材料科学 · 物理学 2015-10-13 Malte Behrmann , Frank Lechermann

A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition…

超导电性 · 物理学 2016-02-17 E. Fillis-Tsirakis , C. Richter , J. Mannhart , H. Boschker

Finding new collective electronic states in materials is one of the fundamental goals of condensed matter physics. Atomic-scale superlattices formed from transition metal oxides are a particularly appealing hunting ground for new physics.…

Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk…

The interface between the two complex oxides LaAlO3 and SrTiO3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of sketched…

We examine the enhancement of the interfacial superconductivity between LaAlO$_{3}$ and SrTiO$_{3}$ by an effective electric field. Through the breaking of inversion symmetry at the interface, we show that a term coupling the superfluid…

超导电性 · 物理学 2015-06-03 Jason T. Haraldsen , Peter Wölfle , Alexander V. Balatsky
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