相关论文: Formation of Ideal Rashba States on Layered Semico…
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…
Spin currents which allow for a dissipationless transport of information can be generated by electric fields in semiconductor heterostructures in the presence of a Rashba-type spin-orbit coupling. The largest Rashba effects occur for…
Two-dimensional materials with Rashba split bands near the Fermi level are key to developing upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here,…
The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome…
A large and ideal Rashba-type spin-orbit splitting is desired for the applications of materials in spintronic devices and the detection of Majorana Fermions in solids. Here, we propose an approach to achieve giant and ideal spin-orbit…
In spintronic devices, the two main approaches to actively control the electrons' spin degree of freedom involve either static magnetic or electric fields. An alternative avenue relies on the application of optical fields to generate spin…
We demonstrate the induction of a giant Rashba-type spin-splitting on a semiconducting substrate by means of a Bi trimer adlayer on a Si(111) wafer. The in-plane inversion symmetry is broken so that the in-plane potential gradient induces a…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of…
Bismuth produces different types of ordered superstructures on the InAs(100) surface, depending on the growth procedure and coverage. The (2x1) phase forms at completion of a Bi monolayer and consists of a uniformly oriented array of…
The Rashba effect as an electrically tunable spin-orbit interaction is the base for a multitude of possible applications such as spin filters, spin transistors, and quantum computing using Majorana states in nanowires. Moreover, this…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
We fabricated spin-polarized surface electronic states with tunable Fermi level from semiconductor to low-dimensional metal in the Bi/GaSb(110)-(2$\times$1) surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved…
Search of novel two-dimensional giant Rashba semiconductors is a crucial step in the development of the forthcoming nano-spintronics technology. Using first-principle calculations, we study a stable two-dimensional crystal phase of BiSb…
In the two-dimensional electron gas (2DEG) emerging at the transition metal oxide surface and interface, it has been pointed out that the Rashba spin-orbit interaction, the momentum-dependent spin splitting due to broken inversion symmetry…
In the present article, we explore the electron properties of magnetic semiconductors with strong Rashba spin-orbit coupling taking into account the presence of domain walls at the sample surface. We consider antiphase domain walls…
We investigated the Rashba spin splittings in a compressive-strained SrTiO$_3$(001) ultra thin-film using first-principles calculations. The effect of the polarization due to the compressive strain leads to the 2DEG with large Rashba spin…
Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in…
Atomically thin layers of metals deposited on semiconductors display a variety of physical properties such as superconductivity, charge density waves, topological phases, strong spin-orbit (Rashba) splitting, among others. To access these…
Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state…
A Rashba type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage…