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相关论文: Disorder induced Dirac-point physics in epitaxial …

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The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual…

介观与纳米尺度物理 · 物理学 2013-04-24 Atikur Rahman , Janice Wynn Guikema , Nina Markovic

Effects of disorder on the electronic transport properties of graphene are strongly affected by the Dirac nature of the charge carriers in graphene. This is particularly pronounced near the Dirac point, where relativistic charge carriers…

介观与纳米尺度物理 · 物理学 2015-06-18 Atikur Rahman , Janice Wynn Guikema , Nina Markovic

We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the…

介观与纳米尺度物理 · 物理学 2017-09-13 A. Nachawaty , M. Yang , W. Desrat , S. Nanot , B. Jabakhanji , D. Kazazis , R. Yakimova , A. Cresti , W. Escoffier , B. Jouault

We report on magneto-transport measurement in disordered graphene under pulsed magnetic field of up to 57T. For large electron or hole doping, the system displays the expected anomalous Integer Quantum Hall Effect (IQHE) specific to…

介观与纳米尺度物理 · 物理学 2015-05-18 J. M. Poumirol , W. Escoffier , A. Kumar , M. Goiran , B. Raquet , J. M. Broto

We study the conductivity of graphene with a smooth but particle-hole-asymmetric disorder potential. Using perturbation theory for the weak-disorder regime and numerical calculations we investigate how the particle-hole asymmetry shifts the…

介观与纳米尺度物理 · 物理学 2016-01-12 Max Hering , Martin Schneider , Piet W. Brouwer

We theoretically consider, comparing with the existing experimental literature, the electrical conductivity of gated monolayer graphene as a function of carrier density, temperature, and disorder in order to assess the prospects of…

介观与纳米尺度物理 · 物理学 2013-01-28 S. Das Sarma , E. H. Hwang

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for…

介观与纳米尺度物理 · 物理学 2014-01-16 S. Gattenloehner , W. -R. Hannes , P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin , M. Titov

Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low…

Despite extensive existing studies, a complete understanding of the role of disorder in affecting the physical properties of two-dimensional Dirac fermionic systems remains a standing challenge, largely due to obstacles encountered in…

介观与纳米尺度物理 · 物理学 2023-08-04 Bo Fu , Yanru Chen , Weiwei Chen , Wei Zhu , Ping Cui , Qunxiang Li , Zhenyu Zhang , Qinwei Shi

Multi-point probability measures along with the dielectric function of Dirac Fermions in mono-layer graphene containing particle-particle and white-noise (out-plane) disorder interactions on an equal footing in the Thomas-Fermi-Dirac…

统计力学 · 物理学 2018-02-06 M. N. Najafi

Understanding disorder in graphene is essential for electronic applications; in contrast to conventional materials, the extraordinarily low electron-phonon scattering1, 2 in graphene implies that disorder3-7 dominates its resistivity even…

介观与纳米尺度物理 · 物理学 2011-11-14 Jun Yan , Michael S. Fuhrer

Epitaxial graphene on silicon carbide, or epigraphene, provides an excellent platform for Hall sensing devices in terms of both high electrical quality and scalability. However, the challenge in controlling its carrier density has thus far…

Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 {\deg}C). The precise quantized Hall resistance of Rxy =…

We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and…

介观与纳米尺度物理 · 物理学 2013-05-29 Johannes Jobst , Daniel Waldmann , Florian Speck , Roland Hirner , Duncan K. Maude , Thomas Seyller , Heiko B. Weber

We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main…

介观与纳米尺度物理 · 物理学 2009-11-13 R. Asgari , M. M. Vazifeh , M. R. Ramezanali , E. Davoudi , B. Tanatar

We present a theory of electronic transport in graphene in the presence of randomly placed adsorbates. Our analysis predicts a marked asymmetry of the conductivity about the Dirac point, as well as a negative weak-localization…

介观与纳米尺度物理 · 物理学 2008-11-05 John P. Robinson , Henning Schomerus , Laszlo Oroszlany , Vladimir I. Fal'ko

In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in…

材料科学 · 物理学 2015-05-13 Yuanbo Zhang , Victor W. Brar , Caglar Girit , Alex Zettl , Michael F. Crommie

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

The electronic properties of non-interacting particles moving on a two-dimensional bricklayer lattice are investigated numerically. In particular, the influence of disorder in form of a spatially varying random magnetic flux is studied. In…

无序系统与神经网络 · 物理学 2009-12-22 L. Schweitzer

We predict the existence of an intriguing "disorder by order" phenomenon in graphene transport where higher quality (and thus more ordered) samples, while having higher mobility at high carrier density, will manifest more strongly…

介观与纳米尺度物理 · 物理学 2012-05-25 S. Das Sarma , E. H. Hwang , Qiuzi Li
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