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相关论文: A variational Monte Carlo study of exciton condens…

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We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

We derive an effective Bose-Hubbard model that predicts a phase transition from Bose-Einstein condensate to Mott insulator in two different systems subject to applied periodic potentials: microcavity exciton-polaritons and indirect…

介观与纳米尺度物理 · 物理学 2015-05-18 Tim Byrnes , Patrik Recher , Yoshihisa Yamamoto

Photoinduced dynamics in an excitonic insulator is studied theoretically by using a two-orbital Hubbard model on the square lattice where the excitonic phase in the ground state is characterized by the BCS-BEC crossover as a function of the…

强关联电子 · 物理学 2018-04-04 Yasuhiro Tanaka , Manabu Daira , Kenji Yonemitsu

Identifying materials hosting an excitonic insulator ground state has been one of the major pursuits in condensed matter physics in recent years. Promising candidates in transition metal chalcogenide compounds (TMC), including…

强关联电子 · 物理学 2026-03-20 Yao Zeng , Shi-Cong Mo , Wéi Wú

Using the dynamical mean-field approximation we investigate formation of excitonic condensate in the two-band Hubbard model in the vicinity of the spin-state transition. With temperature and band filling as the control parameters we realize…

强关联电子 · 物理学 2014-12-30 Jan Kunes

We studied the possibility of exciton condensation in a strongly correlated bilayer extended Hubbard model using Determinant Quantum Monte Carlo. To model both the onsite repulsion U and the interlayer interaction V we introduced a novel…

强关联电子 · 物理学 2013-12-25 Louk Rademaker , Steve Johnston , Jan Zaanen , Jeroen van den Brink

We study, using quantum Monte-Carlo simulations, the bosonic Kondo-Hubbard model in a two dimensional square lattice. We explore the phase diagram and analyse the mobility of particles and magnetic properties. At unit filling, the…

量子气体 · 物理学 2017-01-18 T. Flottat , F. Hébert , V. G. Rousseau , R. T. Scalettar , G. G. Batrouni

The Quantum Monte Carlo simulations of the ionic Hubbard model on a two-dimensional square lattice at half filling were performed. The method based on the direct-space, proposed by Suzuki and al., Hirsch and al., was used. Cycles of…

强关联电子 · 物理学 2010-02-02 Bernard Martinie

We employ mean-field approximation to investigate the interplay between the nontrivial band topology and the formation of excitonic insulator (EI) in a one-dimensional chain of atomic $s-p$ orbitals in the presence of repulsive…

强关联电子 · 物理学 2021-01-04 Zahra Khatibi , Roya Ahemeh , Mehdi Kargarian

Spectral properties of the Bose-Hubbard model and a recently proposed coupled-cavity model are studied by means of quantum Monte Carlo simulations in one dimension. Both models exhibit a quantum phase transition from a Mott insulator to a…

其他凝聚态物理 · 物理学 2009-09-17 Peter Pippan , Hans Gerd Evertz , Martin Hohenadler

Excitonic band structure is critical for investigating exciton dynamics. Theoretically, quantum effects from exchange scattering between electron-hole pairs significantly modulate exciton dispersion. Here, we report the direct observation…

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

We act on the suggestion that an excitonic insulator state might separate---at very low temperatures---a semimetal from a semiconductor and ask for the nature of these transitions. Based on the analysis of electron-hole pairing in the…

强关联电子 · 物理学 2015-06-03 B. Zenker , D. Ihle , F. X. Bronold , H. Fehske

Motivated by the possibility of pressure-induced exciton condensation in intermediate-valence Tm[Se,Te] compounds we study the Falicov-Kimball model extended by a finite f-hole valence bandwidth. Calculating the Frenkel-type exciton…

强关联电子 · 物理学 2009-11-13 D. Ihle , M. Pfafferott , E. Burovski , F. X. Bronold , H. Fehske

In this paper, first, we present a general formulation to investigate the ground-state and elementary excitations of an excitonic insulator (EI) in real materials. In addition, we discuss the out-of-equilibrium state induced (albeit…

强关联电子 · 物理学 2023-02-03 Efstratios Manousakis

Recent research on excitonic insulator has progressed mainly based on narrow bandgap semiconductor or semimetal. Herein, we realize excitonic insulator based on two-dimensional (2D) wide band gap diamond with transition temperature as high…

量子物理 · 物理学 2025-10-09 Shisheng Lin , Shaoqi Huang , Minhui Yang , Xin Chen , Hongjia Bi , Kangchen Xiong

The bilayer Hubbard model with electron-hole doping is an ideal platform to study excitonic orders due to suppressed recombination via spatial separation of electrons and holes. However, suffering from the sign problem, previous quantum…

强关联电子 · 物理学 2020-02-26 Xuxin Huang , Martin Claassen , Edwin W. Huang , Brian Moritz , Thomas P. Devereaux

Motivated by recent experiments, which give strong evidence for an excitonic insulating phase in $\rm TmSe_{0.45}Te_{0.55}$, we developed a scheme to quantitatively construct, for generic two-band models, the phase diagram of an excitonic…

强关联电子 · 物理学 2009-11-11 B. Hülsen , F. X. Bronold , H. Fehske , K. Yonemitsu

We present a framework of an auxiliary field quantum Monte Carlo (QMC) method for multi-orbital Hubbard models. Our formulation can be applied to a Hamiltonian which includes terms for on-site Coulomb interaction for both intra- and…

强关联电子 · 物理学 2009-10-30 Yukitoshi Motome , Masatoshi Imada

We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We…

强关联电子 · 物理学 2009-10-31 Jizhong Lou , Shaojin Qin , Tao Xiang , Changfeng Chen , Guang-Shan Tian , Zhaobin Su
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