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相关论文: Tunable site- and orbital-selective Mott transitio…

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The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…

强关联电子 · 物理学 2016-02-01 David E. Logan , Martin R. Galpin

The interplay between delocalisation and repulsive interactions can cause electronic systems to undergo a Mott transition between a metal and an insulator. Here we use neural network hidden fermion determinantal states (HFDS) to uncover…

强关联电子 · 物理学 2024-12-10 Chloé Gauvin-Ndiaye , Joseph Tindall , Javier Robledo Moreno , Antoine Georges

Motivated by recent studies of the cluster Mott insulator candidate compound Nb3Cl8, this study performs 93Nb and 35Cl nuclear magnetic resonance (NMR) measurements to investigate the electron correlations. Below the structural transition…

强关联电子 · 物理学 2025-03-18 Y. Z. Zhou , X. Han , J. Luo , D. T. Wu , A. F. Fang , B. Shen , B. J. Feng , Y. G. Shi , J. Yang , R. Zhou

Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

We report on isothermal pulsed (20 ms) field magnetization, temperature dependent AC - susceptibility, and the static low magnetic field measurements carried out on 10 nm sized Pr0.5Ca0.5MnO3 nanoparticles (PCMO10). The saturation field for…

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

Motivated by recent scanning tunneling microscope (STM) experiments on cobalt clusters adsorbed on single wall metallic nanotubes [Odom {\em et al.}, Science {\bf 290}, 1549 (2000)], we study theoretically the size dependence of STM spectra…

强关联电子 · 物理学 2009-11-07 Gregory A. Fiete , Gergely Zarand , Bertrand I. Halperin , Yuval Oreg

The I-Mn-V antiferromagnet, NaMnBi, develops a very large positive magnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing a semiconductor-to-metal transition (SMT). In the absence of an SMT, a modest (20%) MR is achieved.…

材料科学 · 物理学 2020-07-15 Aaron Wegner , Despina Louca , Keith Taddei , Joerg Neuefeind

Manipulating oxygen vacancies in strongly correlated rare-earth nickelate perovskites (RNiO$_3$) enables the tuning of their elusive metal-insulator transition (MIT), providing a better handle for control over their electronic properties.…

强关联电子 · 物理学 2026-01-06 Uthpala Herath , Vijay Singh , Soumya S. Bhat , Hyowon Park , Aldo H. Romero

The localization-delocalization transition is at the heart of strong correlation physics. Recently, there is great interest in multiorbital systems where this transition can be restricted to certain orbitals, leading to an orbital-selective…

强关联电子 · 物理学 2022-08-24 Fabian B. Kugler , Gabriel Kotliar

Recent experiments on isolated Co clusters have shown huge orbital magnetic moments in comparison with their bulk and surface counterparts. These clusters hence provide the unique possibility to study the evolution of the orbital magnetic…

The Mott critical point between a metal and a correlated insulator has usually been studied via density or spin density bosonic mode fluctuations according to the standard Ginzburg-Landau-Wilson phase transition paradigm. A moment's…

强关联电子 · 物理学 2011-02-19 Zaira Nazario , David I. Santiago

We present a detailed derivation of a multi-site mean-field theory (MSMFT) used to describe the Mott-insulator to superfluid transition of bosonic atoms in optical lattices. The approach is based on partitioning the lattice into small…

量子气体 · 物理学 2015-06-03 T. McIntosh , P. Pisarski , R. J. Gooding , E. Zaremba

While the traditional local-density approximation (LDA) cannot describe Mott insulators, {\it ab-initio} determination of the Hubbard $U$, for example, limits LDA-plus dynamical mean field theory (DMFT) approaches. Here, we attempt to…

强关联电子 · 物理学 2009-02-12 M. S. Laad , L. Hozoi , L. Craco

The effect of quenched disorder on the multiphase competition has been investigated by examining the pressure phase diagram of half doped manganite Ln0.5B0.5MnO3 (Ln = Sm and Nd) with A-site disorders. Sm0.5Ba0.5MnO3, a spin glass insulator…

强关联电子 · 物理学 2009-11-10 N. Takeshita , C. Terakura , D. Akahoshi , Y. Tokura , H. Takagi

The low temperature phase of single crystals of Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ and Gd$_{0.5}$Ca$_{0.5}$MnO$_3$ manganites is investigated by squid magnetometry. Nd$_{0.5}$Ca$_{0.5}$MnO$_3$ undergoes a charge-ordering transition at…

材料科学 · 物理学 2016-08-31 R. Mathieu , P. Nordblad , A. R. Raju , C. N. R. Rao

A metal-insulator transition (MIT) in BiFeO$_3$ under pressure was investigated by a method combining Generalized Gradient Corrected Local Density Approximation with Dynamical Mean-Field Theory (GGA+DMFT). Our paramagnetic calculations are…

强关联电子 · 物理学 2018-11-01 A. O. Shorikov , A. V. Lukoyanov , V. I. Anisimov , S. Y. Savrasov

Spin and charge fluctuations at vicinity of metal-to-Mott insulator transitions are studied in an organic solid with molecular dimers. The extended Hubbard model taking account of the internal electronic degree of freedom in a molecular…

强关联电子 · 物理学 2017-04-26 Naomichi Sato , Tsutomu Watanabe , Makoto Naka , Sumio Ishihara