相关论文: Spin relaxation through Kondo scattering in Cu/Py …

We calculate the dynamical spin response of Kondo impurity and Kondo lattice systems within a semiphenomenological Fermi liquid description, at low temperatures $T<T_K$, the Kondo temperature, and low magnetic fields $B \ll k_B T_K/g\mu_B$.…

We observe a strong correlation between magnetization relaxation and electrical resistivity in thin Permalloy (Ni$_{81}$Fe$_{19}$, ``Py'') films. Electron scattering rates in the films were affected by varying film thickness and deposition…

We analyze the temperature dependence of the electron spin resonance linewidth above the critical region in exchange-coupled magnetic insulators. The focus is on separating the contributions to the linewidth from spin-spin interactions,…

We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…

Low-temperature electron spin relaxation is studied by the optical orientation method in bulk n-GaAs with donor concentrations from 10^14 cm^{-3} to 5x10^17 cm^{-3}. A peculiarity related to the metal-to-insulator transition (MIT) is…

Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…

We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution…

The concept of anisotropy of spin relaxation in non-magnetic metals with respect to the spin direction of the injected electrons relative to the crystal orientation is introduced. The effect is related to an anisotropy of the Elliott-Yafet…

The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a…

Inelastic neutron scattering measurements have been performed on single crystals of the heavy fermion compound Ce$_{0.925}$La$_{0.075}$Ru$_{2}$Si$_{2}$ in broad energy [0.1, 9.5 meV] and temperature [40 mK, 294 K] ranges in order to address…

In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all…

We conduct an experimental investigation of temperature dependence of spin diffusion length in highly-doped n-type silicon by using a non-local 3-terminal method. Whereas an effect of spin drift is not ignorable to bias- and…

We obtain explicit expressions for the correlation functions of transmission and reflection coefficients of coherent electronic waves propagating through a disordered quasi-one-dimensional medium with purely elastic diffusive scattering in…

We perform an analysis of the experimentally known temperature dependence of the staggered magnetization in the antiferromagnetic phase. This analysis allows us to put an upper limit on the unknown value of the spin wave velocity along the…

The variety of the normal-state magnetic properties of cuprate high-Tc superconductors is interpreted based on the self-consistent solution of the self-energy equations for the two-dimensional t-J model. The observed variations of the spin…

The spin-transfer in biased disordered ferromagnet (F) - normal metal (N) systems is calculated by the diffusion equation. For F1-N2-F2 and N1-F1-N2-F2-N3 spin valves, the effect of spin-flip processes in the normal metal and ferromagnet…

Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low…

We have shown that in narrow 2D semiconductor channels the D'yakonov-Perel' spin relaxation rate is strongly reduced. This relaxation slowdown appears in special waveguide diffusion modes which determine the propagation of spin density in…

We present measurements of magnetic field and frequency dependences of the low temperature (T = 1.8 K) AC-susceptibility, and temperature and field dependences of the longitudinal field positive muon spin relaxation ({\mu}SR) for…