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相关论文: All-Back-Schottky-Contact Thin-Film Photovoltaics

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Numerous studies have reported performance enhancement of a thermophotovoltaic (TPV) system when an emitter is separated by nanoscale gaps from a TPV cell. Although a $p$-$n$-junction-based TPV cell has been widely used for the near-field…

应用物理 · 物理学 2019-04-17 Jaeman Song , Mikyung Lim , Seung S. Lee , Bong Jae Lee

Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…

材料科学 · 物理学 2025-04-02 Jihun Lim

Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both…

应用物理 · 物理学 2020-07-01 Elaine McVay , Ahmad Zubair , Yuxuan Lin , Amirhasan Nourbakhsh , Tomás Palacios

Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative…

We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of…

应用物理 · 物理学 2021-02-24 Xin Zhang , Jicheng Wang , Yee Sin Ang , Juncheng Guo

Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent…

Photovoltaic (PV) cells have become one of the most promising renewable energy technologies. To make PV more competitive with incumbent technologies, higher power output densities are needed. One promising approach is to add bifaciality to…

应用物理 · 物理学 2019-03-25 Yubo Sun , Zhiguang Zhou , Reza Asadpour , Muhammad A. Alam , Peter Bermel

Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Although there is general consensus that the injection…

介观与纳米尺度物理 · 物理学 2017-11-08 Roberto Grassi , Yanqing Wu , Steven J. Koester , Tony Low

Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…

光学 · 物理学 2023-11-06 Jacek Gosciniak , Jacob B. Khurgin

Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed…

介观与纳米尺度物理 · 物理学 2020-01-09 H. Selvi , N. Unsuree , E. Whittaker , M. P. Halsall , E. W. Hill , P. Parkinson , T. J. Echtermeyer

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…

介观与纳米尺度物理 · 物理学 2017-10-04 Abhijith Prakash , Hesameddin Ilatikhameneh , Peng Wu , Joerg Appenzeller

We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with…

材料科学 · 物理学 2023-08-24 Masahiro Teraoka , Yuzuki Ono , Hojun Im

Atomically thin layered materials such as graphene and transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their high carrier-transporting properties and strong light-matter…

High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two…

In order to achieve ultrafast response in MgZnO based self-powered Schottky type photodetectors, it is crucial to decrease both the junction capacitance and carrier transit time. To meet these criteria, Au/MgZnO/ITO Schottky junction…

应用物理 · 物理学 2023-06-21 Amit K Das , V. K. Sahu , R. S. Ajimsha , P. Misra

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…

应用物理 · 物理学 2021-10-18 Alessandro Grillo , Antonio Di Bartolomeo

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC…

A graphene layer on top of a dielectric can dramatically influence ability of the material to radiative heat transfer. This property of graphene is used to improve the performance and reduce costs of near-field thermophotovoltaic cells.…

介观与纳米尺度物理 · 物理学 2014-09-16 V. B. Svetovoy , G. Palasantzas

Schottky photodetectors are attractive for CMOS-compatible photonic integrated circuits, but the trade-off between photon absorption and hot carrier emission often compromises the detection fidelity and sensitivity. Here, we report a…

光学 · 物理学 2020-12-30 Charles Lin , Pohan Chang , Amr S. Helmy

Thin-film solar cells that are considered as the second generation of solar cells are known for their low cost and acceptable efficiency. In this technology, semiconductor layers with a thickness of micrometer are deposited on thick enough…

应用物理 · 物理学 2018-11-19 Jabbar Ganji
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