中文
相关论文

相关论文: $Z_2$-gauge theory description of the Mott transit…

200 篇论文

Mott transitions are studied in the two-dimensional Hubbard model by a non-perturbative theory of correlator projection that systematically includes spatial correlations into the dynamical mean-field approximation. Introducing a nonzero…

强关联电子 · 物理学 2009-11-10 Shigeki Onoda , Masatoshi Imada

We analyze the Thermodynamic Bethe Ansatz equations of the one-dimensional half-filled Hubbard model in the "spin-disordered regime", which is characterized by the temperature being much larger than the magnetic energy scale but small…

强关联电子 · 物理学 2009-11-11 S. Ejima , F. H. L. Essler , F. Gebhard

We calculate the zero-temperature gap and quasiparticle weight of the half-filled Hubbard model with a random dispersion relation. After extrapolation to the thermodynamic limit, we obtain reliable bounds on these quantities for the Hubbard…

强关联电子 · 物理学 2009-10-31 R. M. Noack , F. Gebhard

It is shown that the half filled Hubbard model does not display the Mott metal-insulator transition, in the limit of infinite dimensions. The proposed transition on the Bethe lattice is proved to be an artifact. In the atomic limit, the…

强关联电子 · 物理学 2007-05-23 Kurt Fischer

We review a representation of Hubbard-like models that is based on auxiliary pseudospin variables. These pseudospins refer to the local charge modulo two in the original model and display a local Z_2 gauge freedom. We discuss the associated…

强关联电子 · 物理学 2010-04-23 A. Rüegg , S. D. Huber , M. Sigrist

We analyze the unanalytical structure of metal-insulator transition (MIT) in infinite dimensions. By introducing a simple transformation into the dynamical mean-field equation of Hubbard model, a multiple-valued structure in Green's…

强关联电子 · 物理学 2009-11-07 Ning-Hua Tong , Shun-Qing Shen , Fu-Cho Pu

We investigate the metal-insulator transition in the half-filled Hubbard model on a two-dimensional triangular lattice using both the Kotliar-Ruckenstein slave-boson technique, and exact numerical diagonalization of finite clusters.…

强关联电子 · 物理学 2007-08-07 Massimo Capone , Luca Capriotti , Federico Becca , Sergio Caprara

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

Around a metal-to-insulator transition driven by repulsive interaction (Mott transition) the single particle excitations and the collective excitations are equally important. Here we present results for the generic susceptibilities at zero…

强关联电子 · 物理学 2009-04-03 Carsten Raas , Götz S. Uhrig

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

We study a model of fermions on the square lattice at half-filling coupled to an Ising gauge theory, that was recently shown in Monte Carlo simulations to exhibit $\mathbb{Z}_2$ topological order and massless Dirac fermion excitations. On…

强关联电子 · 物理学 2018-07-27 Snir Gazit , Fakher F. Assaad , Subir Sachdev , Ashvin Vishwanath , Chong Wang

We discuss the solution of the Mott transition problem in a fully frustrated lattice with a semicircular density of states in the limit of infinite dimensions from the point of view of a Landau free energy functional. This approach provides…

强关联电子 · 物理学 2009-10-31 Gabriel Kotliar

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

In this article, I discuss W.Kohn's criterion for a metal insulator transition, within the framework of a one band Hubbard model. This and related ideas are applied to 1-dimensional Hubbard systems, and some intersting miscellaneous results…

凝聚态物理 · 物理学 2015-06-25 B. Sriram Shastry

We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of…

强关联电子 · 物理学 2013-07-17 Malte Behrmann , Michele Fabrizio , Frank Lechermann

We study transport properties of the half-filled two-dimensional (2D) Hubbard model with spatially varying interactions, where a pattern of interacting and non-interacting sites is formed. We use Determinantal Quantum Monte Carlo method to…

强关联电子 · 物理学 2014-08-15 Rubem Mondaini , Thereza Paiva

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

凝聚态物理 · 物理学 2015-06-25 Marcelo J. Rozenberg , Goetz Moeller , Gabriel Kotliar

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon

We study theoretically the zero temperature phase transition in two dimensions from a Fermi liquid to a paramagnetic Mott insulator with a spinon Fermi surface. We show that the approach to the bandwidth controlled Mott transition from the…

强关联电子 · 物理学 2009-11-13 T. Senthil
‹ 上一页 1 2 3 10 下一页 ›