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Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…

Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic…

材料科学 · 物理学 2023-07-19 Wei Luo , Hongjun Xiang

Topological insulators (TIs) represent a new quantum state of matter characterized by robust gapless states inside the insulating bulk gap. The metallic edge states of a two-dimensional (2D) TI, known as quantum spin Hall (QSH) effect, are…

介观与纳米尺度物理 · 物理学 2015-06-17 Liangzhi Kou , Binghai Yan , Feiming Hu , Shu-Chun Wu , Tim O. Wehling , Claudia Felser , Changfeng Chen , Thomas Frauenheim

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external…

介观与纳米尺度物理 · 物理学 2014-12-16 Xiaofeng Qian , Junwei Liu , Liang Fu , Ju Li

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for…

介观与纳米尺度物理 · 物理学 2018-05-23 P. Chen , W. -W. Pai , Y. -H. Chan , W. -L. Sun , C. -Z. Xu , D. -S. Lin , M. Y. Chou , A. -V. Fedorov , T. -C. Chiang

A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have…

The field of topological insulators (TIs) is rapidly growing. Concerning possible applications, the search for materials with an easily controllable TI phase is a key issue. The quantum spin Hall effect, characterized by a single pair of…

介观与纳米尺度物理 · 物理学 2012-03-21 Paolo Michetti , Jan C. Budich , Elena G. Novik , Patrik Recher

Two-dimensional transition metal dichalcogenides (TMDs) of Mo and W in their 1T' crystalline phase host the quantum spin Hall (QSH) insulator phase. We address the electronic properties of the QSH edge states by means of first-principles…

材料科学 · 物理学 2019-07-30 Artem Pulkin , Oleg V. Yazyev

Two-dimensional topological insulators (2DTIs), which host the quantum spin Hall (QSH) effect, are one of the key materials in next-generation spintronic devices. To date, experimental evidence of the QSH effect has only been observed in a…

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…

材料科学 · 物理学 2016-11-18 Run-wu Zhang , Wei-xiao Ji , Chang-wen Zhang , Ping Li , Pei-ji Wang

By using first-principles calculation, we have found that a family of 2D transition metal dichalcogenide haeckelites with square-octagonal lattice $MX_2$-4-8 ($M$=Mo, W and $X$=S, Se and Te) can host quantum spin hall effect. The phonon…

材料科学 · 物理学 2015-06-23 S. M. Nie , Zhida Song , Hongming Weng , Zhong Fang

Monolayer transition metal dichalcogenides in the T' phase promise to realize the quantum spin Hall (QSH) effect at room temperature, because they exhibit a prominent spin-orbit gap between inverted bands in the bulk. Here we show that the…

介观与纳米尺度物理 · 物理学 2020-03-04 Daniele Varsano , Maurizia Palummo , Elisa Molinari , Massimo Rontani

Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here…

Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to…

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications.…

介观与纳米尺度物理 · 物理学 2026-01-14 Rajibul Islam , Rahul Verma , Barun Ghosh , Zahir Muhammad , Arun Bansil , Carmine Autieri , Bahadur Singh

So far, several transition metal dichalcogenides (TMDCs) based two-dimensional (2D) topological insulators (TIs) have been discovered, all of them based on a tetragonal lattice. However, in 2D crystals, the hexagonal rather than the…

材料科学 · 物理学 2016-02-17 Yandong Ma , Liangzhi Kou , Xiao Li , Ying Dai , Thomas Heine

Two-dimensional (2D) topological insulators (TIs) with a large bulk band-gap are promising for experimental studies of the quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in…

MoS$_2$, one of transition metal dichalcogenides (TMDs), has caused a lot of attentions for its excellent semiconductor characteristics and potential applications. Here, based on the density functional theory methods, we predict a novel 2D…

材料科学 · 物理学 2016-03-23 Peng-Fei Liu , Liujiang Zhou , Thomas Frauenheim , Li-Ming Wu

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe$_2$. However, the robustness of this…

介观与纳米尺度物理 · 物理学 2024-05-07 Felix Lüpke , Dacen Waters , Anh D. Pham , Jiaqiang Yan , David G. Mandrus , Panchapakesan Ganesh , Benjamin M. Hunt
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