相关论文: Anomalous valley polarization in monolayer MoSe2
Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…
The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin)…
Moir\'e superlattices created by stacking atomic layers of transition metal dichalcogenide semiconductors have emerged as a class of fascinating artificial photonic and electronic materials. An appealing attribute of these structures is the…
The polarization analysis of optical transitions in monolayer and bilayer transition-metal dichalcogenides provides invaluable information on the spin and valley (pseudospin) degrees of freedom. To explain optical properties of a given…
We show room temperature valley coherence with in MoS2, MoSe2, WS2 and WSe2 monolayers using linear polarization resolved hot photoluminescence (PL), at energies close to the excitation - demonstrating preservation of valley coherence…
We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley…
Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton…
The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features…
Atomically thin crystals of transition metal dichalcogenides are ideally suited to study the interplay of light-matter coupling, polarization and magnetic field effects. In this work, we investiagte the formation of exciton-polaritons in a…
Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe$_2$ devices. We observe a linear splitting of $-0.22…
Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential.…
The valley degree of freedom in atomically thin transition-metal dichalcogenides provides a natural binary index for information processing. Exciton-polaritons formed under strong light-matter coupling offer a promising route to overcome…
In this letter we present photoluminescence measurements with different excitation energies on single-layer MoS$_2$ and MoSe$_2$ in order to examine the resonance behavior of the conservation of circular polarization in these transition…
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…
The valley degree of freedom in layered transition-metal dichalcogenides (MX2) provides the opportunity to extend functionalities of novel spintronics and valleytronics devices. Due to spin splitting induced by spin-orbital coupling (SOC),…
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the…
Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…