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Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…

材料科学 · 物理学 2016-06-06 F. -T. Huang , F. Xue , B. Gao , L. H. Wang , X. Luo , W. Cai , X. Lu , J. M. Rondinelli , L. Q. Chen , S. -W. Cheong

Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition…

介观与纳米尺度物理 · 物理学 2022-10-07 Laurent Molino , Leena Aggarwal , Vladimir Enaldiev , Ryan Plumadore , Vladimir Falko , Adina Luican-Mayer

The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric (FE) is a defect of the ``field'' type. The…

材料科学 · 物理学 2009-11-10 A. M. Bratkovsky , A. P. Levanyuk

The discovery of two-dimensional electron gases (2DEGs) at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic and photonic…

Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of…

Epitaxial Ba0.5Sr0.5TiO3 thin films grown on the (001) LaAlO3 substrates with the ferroelectric transition of about 250K have been investigated by TEM and off-axis electron holography. Cross-sectional TEM observations show that the…

材料科学 · 物理学 2009-11-10 H. F. Tian , H. C. Yu , X. H. Zhu , Y. G. Wang , D. N. Zheng , H. X. Yang , J. Q. Li

Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…

超导电性 · 物理学 2025-06-19 M. D. Dong , X. B. Cheng , M. Zhang , J. Wu

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…

材料科学 · 物理学 2015-06-25 Chun-Gang Duan , Sitaram S. Jaswal , Evgeny Y. Tsymbal

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a…

Excess charge on polar surfaces of ionic compounds is commonly described by the two-dimensional electron gas (2DEG) model, a homogeneous distribution of charge, spatially-confined in a few atomic layers. Here, by combining scanning probe…

After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3 system, the recent discovery of a superconducting two-dimensional electron gases (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the…

超导电性 · 物理学 2022-08-24 S. Mallik , G. Ménard , G. Saïz , H. Witt , J. Lesueur , A. Gloter , L. Benfatto , M. Bibes , N. Bergeal

The two-dimensional electron gas (2DEG) at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has become one of the most fascinating and highly-debated oxide systems of recent times. Here we propose that a one-dimensional electron…

介观与纳米尺度物理 · 物理学 2015-06-03 N. C. Bristowe , T. Fix , M. G. Blamire , P. B. Littlewood , Emilio Artacho

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in…

超导电性 · 物理学 2012-07-31 Manan Mehta , D. A. Dikin , C. W. Bark , S. Ryu , C. M. Folkman , C. B. Eom , V. Chandrasekhar

Oxide growth with semiconductor-like accuracy has led to atomically precise thin films and interfaces that exhibit a plethora of phases and functionalities not found in the oxide bulk material. This yielded spectacular discoveries such as…

Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using…

无序系统与神经网络 · 物理学 2022-01-05 Guillaume Rapin , Sophia Ehrensperger , Cédric Blaser , Nirvana Caballero , Patrycja Paruch

Two-dimensional electron gas due to semiconductor interfaces can have high mobility and exhibits superconductivity, magnetism, and other exotic properties that are unexpected in constituent bulk materials. We study crystal structures,…

材料科学 · 物理学 2019-06-13 Xue-Jing Zhang , Bang-Gui Liu

Thermodynamic theory is developed for the ferroelectric phase transition of an ultrathin film in equilibrium with a chemical environment that supplies ionic species to compensate its surface. Equations of state and free energy expressions…

材料科学 · 物理学 2015-05-20 G. Brian Stephenson , Matthew J. Highland

Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous…

General features of finite size effects in the ferroelectric-semiconductor film under open-circuited electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature…

材料科学 · 物理学 2015-06-19 Eugene A. Eliseev , Sergei V. Kalinin , Anna N. Morozovska

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10$^4$ cm$^2$V$^{-1}$s$^{-1}$) charge transport in epitaxial films of Co$_2$MnSi and…

材料科学 · 物理学 2014-01-07 P. K. Rout , Himanshu Pandey , Lijun Wu , Anupam , P. C. Joshi , Z. Hossain , Yimei Zhu , R. C. Budhani