相关论文: Solid solutions with coexisting antiferroelectric …
Ferroelectric materials are established candidates for beyond complementary metal-oxide-semiconductor technology, owing to their non-volatile spontaneous electrical polarization. The recent boom in electric dipole texture engineering and…
The structure of ABO3 perovskites is dominated by two types of unstable modes, namely, the oxygen octahedral rotation (AFD) and ferroelectric (FE) mode. It is generally believed that such AFD and FE modes tend to compete and suppress each…
Electro-active materials are classified as electrostrictive and piezoelectric materials. They deform under the action of an external electric field. Piezoelectric material, as a special class of active materials, can produce an internal…
Lead zirconate (PbZrO$_3$) is considered the prototypical antiferroelectric material with an antipolar ground state. Yet, several experimental and theoretical works hint at a partially polar behaviour in this compound, indicating that the…
The race to engineering metamaterials comprising of a negative refractive index in the optical range has been fueled by the realization of negative index materials for GHz frequencies six years ago. Sheer miniaturization of the GHz resonant…
A novel active negative index metamaterial that derives its gain from an electron beam is intro- duced. The metamaterial consists of a stack of equidistant parallel metal plates perforated by a periodic array of holes shaped as…
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE…
We discuss the feasibility of negative refraction with reduced absorption in coherently driven atomic media. Coherent coupling of an electric and a magnetic dipole transition by laser fields induces magneto-electric cross-coupling and…
Polycrystalline hafnia-based thin films exhibit mixed ferroelectric (FE), antiferroelectric (AFE), and dielectric (DE) behavior, with switching characteristics strongly influenced by microstructure and phase distribution. Here, we develop a…
Due to the lack of a net magnetization both at the interface and in the bulk, antiferromagnets with compensated interfaces may appear incapable of influencing the phase transition in an adjacent superconductor via the spin degree of…
In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces…
Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive…
We study the dielectric response of ferroelectric (FE) thin films with "dead" dielectric layer at the interface with electrodes. The domain structure inevitably forms in the FE film in presence of the dead layer. As a result, the effective…
Compression-induced buckling instability of metal thin films on a compliant base result in surface wrinkles. A stiff thin film, perfectly bonded to an infinitely deep pre-stretched dielectric elastomer (DE) substrate, is considered. Linear…
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is…
The recently discovered ferroelectric nematic liquid-crystal material DIO exhibits an antiferroelectric (AF) phase, characterized by a sinusoidally modulated structure between the paraelectric (P) and ferroelectric (F) nematic phases.…
DC electrical degradation as a form of dielectric and resistance breakdown is a common phenomenon in thin-film devices including resistance-switching memory. To obtain design data and to probe the degradation mechanism, highly accelerated…
An electric inductor-capacitor (ELC) resonator provides a series of electrical resonances and a pair of ELC resonators leads to the split of each resonance into two modes, i.e., magnetic and electric modes, corresponding to antisymmetric…
Ferroelectric materials are spontaneous symmetry breaking systems characterized by ordered electric polarizations. Similar to its ferromagnetic counterpart, a ferroelectric domain wall can be regarded as a soft interface separating two…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…