相关论文: Antisite Disorder-induced Exchange Bias Effect in …

First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…

Using spin-polarized low-energy electron microscopy to study magnetization in epitaxial layered systems, we found that the area vs perimeter relationship of magnetic domains in the top Fe layers of Fe/NiO/Fe(100) structures follows a…

Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly…

The exchange bias (EB) effect was discovered 60 years ago by Meiklejohn and Bean. Meanwhile the EB effect has become an integral part of modern magnetism with implications for basic research and for numerous device applications. The EB…

Exchange bias (EB) refers to a shift of the hysteresis loop along the field axis in materials consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers, generally after a cooling procedure in high magnetic field. This effect is…

Double perovskites Sr2FeOsO6 and Ca2FeOsO6 show puzzling magnetic properties, the former a low-temperature antiferromagnet while the later a high-temperature insulating ferrimagnet. Here, in order to understand the underlying mechanism, we…

Frustrated antiferromagnets offer a captivating platform to study the intricate relationship of magnetic interactions, geometric constraints, and emergent phenomena. By controlling spin orientations, these materials can be tailored for…

Exchange biased composites of ferromagnetic single-domain Ni nanoparticles embedded within large grains of MnO have been prepared by reduction of Ni$_x$Mn$_{1-x}$O$_4$ phases in flowing hydrogen. The Ni precipitates are 15-30 nm in extent,…

The exchange bias at ferromagnetic/antiferromagnetic interfaces strongly depends upon the state of antiferromagnetic (AF) layer which, due to strong magnetoelastic coupling, is sensitive to mechanical stresses. In the present paper we…

A combination of competing exchange interactions and substitutional disorder gives rise to magnetic inhomogeneities in the [Y$_{2-x}$Mn$_x$]MnMnMn$_4$O$_{12}$ $x = 0.23$ and $x = 0.16$ quadruple perovskite manganites. Our neutron powder…

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films…

Switchable order parameters in ferroic materials are essential for functional electronic devices, yet disruptions of the ordering can take the form of planar boundaries or defects that exhibit distinct properties. Characterizing the…

Here, we report on the structural, electronic, and magnetic properties of a polycrystalline sample of the LaCaCoIrO$_6$ double-perovskite investigated by means of synchrotron x-ray powder diffraction, x-ray absorption spectroscopy, and…

Hexagonal YMnO_3 with space group P63cm is one of the rare examples of multiferroic materials that exhibit co-dependence of a robust ferroelectric phase along with antiferromagnetic ordering. This is primarily ascribed to tilting of the…

The domain state model for exchange bias has been further investigated by considering vector spins for the antiferromagnet instead of Ising spins used in the earlier studies. The qualitative results are similar to those with infinite…

The phase diagram of the double perovskites of the type Sr_{2-x} La_x Fe Mo O_6 is analyzed, with and without disorder due to antisites. In addition to an homogeneous half metallic ferrimagnetic phase in the absence of doping and disorder,…

Intrinsic exchange bias is known as the unidirectional exchange anisotropy that emerges in a nominally single-component ferro-(ferri-)magnetic system. In this work, with magnetic and structural characterizations, we demonstrate that…

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the…

Charged polar interfaces such as charged ferroelectric domain walls or heterostructured interfaces of ZnO/(Zn,Mg)O and LaAlO3/SrTiO3, across which the normal component of electric polarization changes suddenly, can host large…

Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…