相关论文: Silicon MOS Pixel Based on the Deep Trapping Gate …

In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…

For several decades, ions have been trapped by radio frequency (RF) and neutral particles by optical fields. We implement the experimental proof-of-principle for trapping an ion in an optical dipole trap. While loading, initialization and…

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the…

Striving for higher gate fidelity is crucial not only for enhancing existing noisy intermediate-scale quantum (NISQ) devices but also for unleashing the potential of fault-tolerant quantum computation through quantum error correction. A…

The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absortion Transient Current Technique (TPA-TCT). This technique provides sensitivity maps with micrometer-scale spatial resolution, enabling…

We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon…

Discretizing an analytic function on a uniform real-space grid is often done via a straightforward collocation method. This is ubiquitous in all areas of computational physics and quantum chemistry. An example in Density Functional Theory…

Separation is a crucial step in the analysis of living microparticles. In particular, the selective microseparation of phytoplankton by size and shape remains an open problem, even though these criteria are essential for their gender and/or…

A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…

The 3D silicon sensor has demonstrated excellent performances (signal collection, detection efficiency, power consumption, etc.) comparable or even better with respect to the traditional planar sensor of the ATLAS Detector at the Large…

A deep image compression scheme is proposed in this paper, offering the state-of-the-art compression efficiency, against the traditional JPEG, JPEG2000, BPG and those popular learning based methodologies. This is achieved by a novel…

During LHC Long Shutdown 3, the ALICE experiment will replace the three innermost layers of its Inner Tracking System (ITS2) with a new vertex detector, the ITS3. This new detector will be assembled using wafer-scale, stitched Monolithic…

CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low…

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper…

Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG)…

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…

Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface…

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF,…

Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…

Iontronics combines ions as charge carriers with electronic-like operations, enabling unique information processing, chemical regulation, and enhanced bio-integrability. Standard simulation tools encounter difficulties in effectively…