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相关论文: Percolation conductivity in hafnium sub-oxides

200 篇论文

We investigate a model of excitonic ordering (i.e electron-hole pair condensation) appropriate for the divalent hexaborides. We show that the inclusion of imperfectly nested electron hole Fermi surfaces can lead to the formation of an…

强关联电子 · 物理学 2007-05-23 M. Y. Veillette , L. Balents

Electron-doped infinite-layer Sr$_{1-x}$Eu$_{x}$CuO$_{2+y}$ films over a wide doping range have been prepared epitaxially on SrTiO$_3$(001) using reactive molecular beam epitaxy. In-plane transport measurements of the single crystalline…

We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant…

材料科学 · 物理学 2015-06-19 Simone Fratini , Sergio Ciuchi , Didier Mayou

HfO$_2$-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-density, non-volatile memory applications. Oxygen vacancies,…

材料科学 · 物理学 2026-01-06 Yudi Yang , Wooil Yang , Young-Woo Son , Shi Liu

With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…

新兴技术 · 计算机科学 2025-08-13 Luca Fehlings , Thomas Mikolajick , Beatriz Noheda , Erika Covi

We introduce a model to explain the observed ferromagnetism and superconductivity in LAO/STO oxide interface structures. Due to the polar catastrophe mechanism, 1/2 charge per unit cell is transferred to the interface layer. We argue that…

超导电性 · 物理学 2012-03-14 Karen Michaeli , Andrew C. Potter , Patrick A Lee

We present $ab$ $initio$ study of the electronic stopping power of protons and helium ions in an insulating material, HfO$_{2}$. The calculations are carried out in channeling conditions with different impact parameters by employing…

原子与分子团簇 · 物理学 2017-10-11 Chang-Kai Li , Feng Wang , Bin Liao , Xiao-Ping OuYang , Feng-Shou Zhang

We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined…

介观与纳米尺度物理 · 物理学 2020-05-11 N. N. Orlova , S. I. Bozhko , E. V. Deviatov

We investigated the unoccupied part of the electronic structure of the oxygen-deficient hafnium oxide (HfO$_{\sim1.8}$) using soft x-ray absorption spectroscopy at O $K$ and Hf $N_3$ edges. Band-tail states beneath the unoccupied Hf 5$d$…

材料科学 · 物理学 2009-11-13 Deok-Yong Cho , Jae-Min Lee , S. -J. Oh , Hoyoung Jang , J. -Y. Kim , J. -H. Park , A. Tanaka

We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged…

材料科学 · 物理学 2009-11-11 J. L. Gavartin , D. Munoz Ramo , A. L. Shluger , G. Bersuker , B. H. Lee

We propose a model for explaining the recent results obtained by J. Schon et al (1,2) on transport properties of electrons and holes in one plane of CuO2 in a layered cuprate (CaCuO2) where the carriers are created using a field effect…

超导电性 · 物理学 2007-05-23 J. Bok , J. Bouvier

In the quest of green energy, Solid Oxide Fuel Cells (SOFC) have drawn considerable attention for chemical-to-electric energy conversion. In the present paper, we report an enhancement of ionic conductivity in Cu2P2-xVxO7 by vanadium…

The low-energy electronic Hamiltonian for the thinest zigzag carbon nanotube, embedded into a dielectric host, is derived and its phase diagram is discussed. The specific multi-band structure and the microscopic form of the…

超导电性 · 物理学 2007-05-23 Krzysztof Byczuk

Mastery of order-disorder processes in highly non-equilibrium nanostructured oxides has significant implications for the development of emerging energy technologies. However, we are presently limited in our ability to quantify and harness…

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing such as oxygen vacancy formation and interfacial reactions appear to strongly affect device performance. However, the nanoscale structure,…

Hafnium oxide (HfO2), particularly at low-dimensional scales, exhibits extensive promising applications in ultrahigh density devices like low-power logic and non-volatile memory devices due to its compatibility with current semiconductor…

The degradation of ultrathin oxide layers in the presence of a stress voltage is modeled in terms of two antagonist percolation processes taking place in a random resistor network. The resistance and leakage current fluctuations are studied…

凝聚态物理 · 物理学 2009-11-07 C. Pennetta , L. Reggiani , Gy. Trefan

It is generally assumed that oxygen potential in a thin oxide electrolyte follows a linear distribution between electrodes. Jacobsen and Mogensen have shown, however, that this is not the case for thin zirconia membranes in solid oxide…

材料科学 · 物理学 2020-05-18 Yanhao Dong , I-Wei Chen

Ferroelectrics and ionic conductors are important functional materials, each supporting a plethora of applications in information and energy technology. The underlying physics governing their functional properties is ionic motion, and yet…

材料科学 · 物理学 2023-12-22 Liyang Ma , Jing Wu , Tianyuan Zhu , Yiwei Huang , Qiyang Lu , Shi Liu

Properties of oxides are interpreted as a result of existence of the virtual sublattices formed by the atomic quantum states. An infinite cluster with the superconductivity of the Bose-Einstein condensate kind can be formed in the ground…

超导电性 · 物理学 2007-05-23 V. N. Bogomolov