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相关论文: Toward Air-Stable Multilayer Phosphorene Thin-Film…

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Most recently, a brand new phosphorus allotrope called green phosphorus has been predicted, which has a direct band gap up to 2.4 eV, and its single-layer form termed green phosphorene shows high stability. Here the mechanical properties…

材料科学 · 物理学 2018-06-18 Guang Yang , Tianxing Ma , Xihong Peng

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

介观与纳米尺度物理 · 物理学 2017-03-13 Vasudevan Iyer , Peide Ye , Xianfan Xu

Monolayers of group VA elements have attracted great attention with the rising of black phosphorus. Here, we derive a simple tight-binding model for monolayer grey arsenic, referred as arsenene (ML-As), based on the first-principles…

材料科学 · 物理学 2018-09-19 Jin Yu , Mikhail I. Katsnelson , Shengjun Yuan

Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin…

Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (~10000 cm2/Vs) and a ~0.3 eV direct bandgap.…

介观与纳米尺度物理 · 物理学 2014-10-30 Yexin Deng , Zhe Luo , Nathan J. Conrad , Han Liu , Yongji Gong , Sina Najmaei , Pulickel M. Ajayan , Jun Lou , Xianfan Xu , Peide D. Ye

Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-plane thermal conductivity of suspended few-layer black…

介观与纳米尺度物理 · 物理学 2015-10-20 Zhe Luo , Jesse Maassen , Yexin Deng , Yuchen Du , Richard P. Garrelts , Mark S. Lundstrom , Peide D. Ye , Xianfan Xu

Simple cubic (sc) black phosphorus (denoted BP), stable at P>10GPa, seems an ordinary metal. It has electron-phonon-driven superconductivity with Tc 5-10 K. The A17 phase, stable at atmospheric pressure, has a narrow gap, becomes…

超导电性 · 物理学 2018-09-11 Xinyu Li , Philip B. Allen

A new hyperelastic membrane material model is proposed for single layer blue phosphorus ($\beta\text{-P}$), also known as blue phosphorene. The model is fully nonlinear and captures the anisotropy of $\beta\text{-P}$ at large strains. The…

材料科学 · 物理学 2019-02-15 Reza Ghaffari , Farzad Shirazian , Ming Hu , Roger A. Sauer

Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of…

应用物理 · 物理学 2022-07-18 Rahul Singh , Prashant Singh , Ganesh Balasubramanian

Pressure-induced superconductivity and structural phase transitions in phosphorous (P) are studied by resistivity measurements under pressures up to 170 GPa and fully $ab-initio$ crystal structure and superconductivity calculations up to…

Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will…

We report first principles theoretical investigations of possible metal contacts to monolayer black phosphorus (BP). By analyzing lattice geometry, five metal surfaces are found to have minimal lattice mismatch with BP: Cu(111), Zn(0001),…

介观与纳米尺度物理 · 物理学 2015-02-03 Kui Gong , Lei Zhang , Wei Ji , Hong Guo

The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here we show that the temperature effect on BP band gap gradually…

Based on extensive evolutionary algorithm driven structural search, we propose a new diphosphorus trisulfide (P2S3) 2D crystal, which is dynamically, thermally and chemically stable as confirmed by the computed phonon spectrum and ab initio…

材料科学 · 物理学 2017-03-03 Hang Xiao , Xiaoyang Shi , Feng Hao , Xiangbiao Liao , Yayun Zhang , Xi Chen

Atomically-thin films of phosphorene (also known as black phosphorus) are a low dimensional optical material with direct exciton emission, whose wavelength is tunable by controlling the number of layers. In addition to this excitonic…

介观与纳米尺度物理 · 物理学 2017-07-03 Shahriar Aghaeimeibodi , Je-Hyung Kim , Edo Waks

To date, the intrinsic thermal conductivity tensor of bulk black phosphorus (BP), an important 2D material, is still unknown, since recent studies focus on BP flakes not on bulk BP. Here we report the anisotropic thermal conductivity tensor…

材料科学 · 物理学 2016-11-22 Bo Sun , Xiaokun Gu , Qingsheng Zeng , Xi Huang , Yuexiang Yan , Zheng Liu , Ronggui Yang , Yee Kan Koh

Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for…

材料科学 · 物理学 2023-05-29 Aitor Garcia-Ruiz , Vladimir Enaldiev , Andrew McEllistrim , Vladimir I. Fal'ko

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented…

Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high…

介观与纳米尺度物理 · 物理学 2014-05-14 Han Liu , Adam T. Neal , Mengwei Si , Yuchen Du , Peide D. Ye

Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and…

材料科学 · 物理学 2016-01-28 V. Wang , Y. C. Liu , Y. Kawazoe , W. T. Geng
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