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相关论文: Induced Work Function Changes at Mg-doped MgO/Ag(0…

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We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulator-semiconductor (MIS) capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing…

介观与纳米尺度物理 · 物理学 2015-05-30 Michele Esposto , Sriram Krishnamoorthy , Digbijoy N. Nath , Sanyam Bajaj , Ting-Hsiang Hung , Siddharth Rajan

The electric field effect on magnetic anisotropy was studied in an ultrathin Fe(001) monocrystalline layer sandwiched between Cr buffer and MgO tunnel barrier layers, mainly through post-annealing temperature and measurement temperature…

Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this…

材料科学 · 物理学 2022-09-14 Mitsuharu Uemoto , Hayato Adachi , Hiroshi Naganuma , Tomoya Ono

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

强关联电子 · 物理学 2014-04-17 Krzysztof Dymkowski , Claude Ederer

First principles calculations based on density functional theory (DFT) are performed to study the electronic properties of Mg acceptors in AlN at the presence of oxygen. It is found that Mg and O tend to form complexes like Mg-O, Mg$_2$-O,…

计算物理 · 物理学 2007-09-18 R. Q. Wu , Y. P. Feng

Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended…

Molecular adsorption at the surface of a 2D material poses numerous questions regarding the modification to the band structure and interfacial states, which of course deserve full attention. In line with this, first-principle density…

材料科学 · 物理学 2020-03-27 Tanmay Das , Sesha Vempati

The intercalation of different species in graphene-metal interfaces is widely used to stabilise the artificial phases of different materials. However, formation of the surface alloys upon the guest-metal intercalation is still an open…

材料科学 · 物理学 2021-12-28 Elena Voloshina , Beate Paulus , Yuriy Dedkov

Motivated from the experimental observation of metal induced gap states (MIGS) at insulator/metal interfaces by Kiguchi {\it et al.} [Phys. Rev. Lett. {\bf 90}, 196803 (2003)], we have theoretically investigated the electronic properties of…

材料科学 · 物理学 2009-11-10 Ryotaro Arita , Yoshiaki Tanida , Kazuhiko Kuroki , Hideo Aoki

Two-dimensional (2D) metallic states induced by oxygen vacancies at oxide surfaces and interfaces provide new opportunities for the development of advanced applications, but the ability to control the behavior of these states is still…

Auger recombination is an important non-radiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism…

Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to…

材料科学 · 物理学 2015-07-10 Kevin Leung , Andrew Leenheer

We use Ca doping during growth of one and two monolayer thick MgO films on Ag(100) to identify the adsorption sites of individual adatoms with scanning tunneling microscopy. For this we combine atomic resolution images of the bare MgO layer…

Atomic and electronic structures of a polar surface of MgO formed on Ag(111) was investigated by using reflection high energy electron diffraction (RHEED), Auger electron spectroscopy, electron energy loss spectroscopy (EELS), and…

材料科学 · 物理学 2009-11-10 Manabu Kiguchi , Shiro Entani , Koichiro Saiki , Takayuki Goto , Atsushi Koma

A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic…

材料科学 · 物理学 2017-04-26 Eric Tea , Jianqiu Huang , Guanchen Li , Celine Hin

X-ray absorption spectroscopy yields direct access to the electronic and geometric structure of hybrid inorganic-organic interfaces formed upon adsorption of complex molecules at metal surfaces. The unambiguous interpretation of…

化学物理 · 物理学 2017-06-19 Katharina Diller , Reinhard J. Maurer , Moritz Müller , Karsten Reuter

Heterointerfaces are ubiquitous in modern devices, found in technologies ranging from microelectronics to structural components for energy applications. Many of these emerging technologies are found in applications such as satellites,…

Experimental results demonstrate a viable strategy for tuning the superconducting properties of MgB2 through the incorporation of an electroluminescent inhomogeneous phase, revealing an interfacial light-phonon-electron synergistic…

超导电性 · 物理学 2026-03-24 Yao Qi , Duo Chen , Qingyu Hai , Xiaoyan Li , Xiaopeng Zhao

Graphene, the carbon monolayer and 2D allotrope of graphite, has the potential to impact technology with a wide range of applications such as optical modulators for high-speed communications. In contrast to modulation devices that rely on…

Polymer-based nanocomposite dielectrics are expected to become essential in future generations of high voltage electrical insulation. However, the physics behind their performance is not yet understood. Here we investigate electronic…

材料科学 · 物理学 2016-07-29 Elena Kubyshkina , Mikael Unge , B. L. G. Jonsson