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相关论文: Weak antilocalization of holes in HgTe quantum wel…

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The results of experimental study of interference induced magnetoconductivity in narrow quantum well HgTe with the normal energy spectrum are presented. Analysis is performed with taking into account the conductivity anisotropy. It is shown…

介观与纳米尺度物理 · 物理学 2018-07-11 G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , S. A. Dvoretski , N. N. Mikhailov

The results of experimental study of the magnetoconductivity of 2D electron gas caused by suppression of the interference quantum correction in HgTe single quantum well heterostructure with the inverted energy spectrum are presented. It is…

无序系统与神经网络 · 物理学 2012-11-13 G. M. Minkov , A. V. Germanenko , O. E. Rut , A. A. Sherstobitov , S. A. Dvoretski , N. N. Mikhailov

We present calculations of the spin and phase relaxation rates in GaAs/AlGaAs $p$-type quantum wells. These rates are used to derive the temperature dependence of the weak-localization correction to the conductivity. In $p$-type quantum…

介观与纳米尺度物理 · 物理学 2009-11-07 L. E. Golub , S. Pedersen

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands…

介观与纳米尺度物理 · 物理学 2016-03-14 M. V. Yakunin , A. V. Suslov , M. R. Popov , E. G. Novik , S. A. Dvoretsky , N. N. Mikhailov

HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in…

The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…

介观与纳米尺度物理 · 物理学 2009-11-07 S. A. Studenikin , P. T. Coleridge , N. Ahmed , P. Poole , A. Sachrajda

In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a…

介观与纳米尺度物理 · 物理学 2019-02-20 T. Khouri , S. Pezzini , M. Bendias , P. Leubner , U. Zeitler , N. E. Hussey , H. Buhmann , L. W. Molenkamp , M. Titov , S. Wiedmann

The conductivity of a two-dimensional HgTe quantum well with a width $\sim$6.3~nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The…

介观与纳米尺度物理 · 物理学 2020-03-25 M. M. Mahmoodian , M. V. Entin

The energy spectrum of the valence band in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells with a width $(8-20)$~nm has been studied experimentally by magnetotransport effects and theoretically in framework $4$-bands $kP$-method. Comparison of the…

Shubnikov-de Haas (SdH) oscillations and magneto-intersubband oscillations of magnetoresistance of structures with single HgTe quantum wells with a width of (10-18) nm have been experimentally studied. The spectrum of the conduction band in…

介观与纳米尺度物理 · 物理学 2024-05-31 G. M. Minkov , O. E. Rut , A. A. Sherstobitov , A. V. Germanenko , S. A. Dvoretski , N. N. Mikhailov

The energy spectrum of the conduction band in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width $d=(4.6-20.2)$ nm has been experimentally studied in a wide range of electron density. For this purpose, the electron density dependence of the…

The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of…

介观与纳米尺度物理 · 物理学 2014-11-14 I. L. Drichko , V. A. Malysh , I. Yu. Smirnov , L. E. Golub , S. A. Tarasenko , A. V. Suslov , O. A. Mironov , M. Kummer , H. von Känel

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal…

介观与纳米尺度物理 · 物理学 2013-02-28 G. M. Gusev , E. B Olshanetsky , Z. D. Kvon , N. N. Mikhailov , S. A. Dvoretsky

The results of an experimental study of the energy spectrum of the valence band in a HgTe quantum well of width d<6.3 nm with normal spectrum in the presence of a strong spin-orbit splitting are reported. The analysis of the temperature,…

The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details…

Conventional $s$-wave superconductivity is understood to arise from singlet pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose net momentum is zero [1]. Several recent studies have focused on structures where such…

We present here a microscopic two-band model based on the structure of energetic levels of holes in $\mathrm{CuO}_{2}$ conducting layers of cuprates. We prove that two energetically near-lying interacting bands can explain the electron-hole…

超导电性 · 物理学 2016-11-03 J. -B. Bru , W. de Siqueira Pedra , A. -S. Dömel

We study quantum point contacts in two-dimensional topological insulators by means of quantum transport simulations for InAs/GaSb heterostructures and HgTe/(Hg,Cd)Te quantum wells. In InAs/GaSb, the density of edge states shows an…

介观与纳米尺度物理 · 物理学 2016-05-17 Michał Papaj , Łukasz Cywiński , Jerzy Wróbel , Tomasz Dietl

A magnetotransport and quantum capacitance of the two-dimensional electron gas in HgTe/Cd$_x$Hg$_{1-x}$Te quantum wells of a width ($20.2-46.0$)~nm are experimentally investigated. It is shown that the first energy subband of spatial…

介观与纳米尺度物理 · 物理学 2023-08-02 G. M. Minkov , V. Ya. Aleshkin , O. E. Rut , A. A. Sherstobitov , S. A. Dvoretski , N. N. Mikhailov , A. V. Germanenko

We studied formation of charge density wave between valleys in a system with a double-well-like dispersive valence band relevant for the rhombohedral graphene trilayer. In a regime with 2 Fermi surfaces, electron- and hole-like: one of…

强关联电子 · 物理学 2025-09-16 Igor V. Blinov
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