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相关论文: Thermoelectric power of bulk black-phosphorus

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The electronic properties of the layered black phosphorus (black-P) and its monolayer counterpart phosphorene are investigated by using the first-principles calculations based on the density functional theory (DFT). The room-temperature…

材料科学 · 物理学 2014-04-22 H. Y. Lv , W. J. Lu , D. F. Shao , Y. P. Sun

Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy and are highly desirable for the development of portable, solid state, passively-powered electronic systems. The conversion efficiencies of such…

材料科学 · 物理学 2015-01-06 Ruixiang Fei , Alireza Faghaninia , Ryan Soklaski , Jia-An Yan , Cynthia Lo , Li Yang

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while…

材料科学 · 物理学 2015-06-19 Z. Viskadourakis , M. L. Paramês , O. Conde , M. Zervos , J. Giapintzakis

We report operating temperatures and heating coefficients measured in a multi-layer black phosphorus device as a function of injected electrical power. By combining micro-Raman spectroscopy and electrical transport measurements, we have…

材料科学 · 物理学 2015-12-15 Michael Engel , Mathias Steiner , Shu-Jen Han , Phaedon Avouris

Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have…

材料科学 · 物理学 2016-06-08 J. Zhang , H. J. Liu , L. Cheng , J. Wei , J. H. Liang , D. D. Fan , P. H. Jiang , L. Sun , J. Shi

We employ density functional theory to investigate the thermoelectric properties of electron and hole doped PtSb$_2$. Our results show that for doping of 0.04 holes per unit cell (1.5$\times10^{20}$ cm$^{-3}$) PtSb$_2$ shows a high Seebeck…

材料科学 · 物理学 2014-02-19 Y. Saeed , N. Singh , Schwingenschlögl

The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…

材料科学 · 物理学 2013-03-18 Andrew F. May , Michael A. McGuire , Hsin Wang

We present the effects of lead doping on the thermoelectric properties of Tellurium Telluride, prepared by solid state reactions in an evacuated sealed silica tubes. Structurally, all these compounds were found to be phase pure as confirmed…

强关联电子 · 物理学 2016-10-05 Wiqar Hussain Shah , Aqeel Khan , Waqar Adil Syed

An experimental setup was developed for the measurement of the thermoelectric power (TEP, Seebeck coefficient) in the temperature range from 2 to 350 K and magnetic fields up to 140 kOe. The system was built to fit in a commercial cryostat…

仪器与探测器 · 物理学 2015-05-18 Eundeok Mun , Sergey L. Bud'ko , Milton S. Torikachvili , Paul C. Canfield

We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment. These…

An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported…

仪器与探测器 · 物理学 2019-08-16 Soumya Biswas , Aditya S Dutt , Nirmal Sabastian , Vinayak B Kamble

We report the thermoelectric (TE) properties of Na$_{0.74}$Co$_{0.95}$Nb$_{0.05}$O$_{2}$ in the temperature range $300-1200$ K, as a potential candidate for p-type thermoelectric material. The experimental values of Seebeck coefficient (S)…

强关联电子 · 物理学 2019-11-18 Arzena Khatun , Shamim Sk , Jayashree Pati , R. S. Dhaka , Sudhir K. Pandey

Thermoelectric properties of polycrystalline p-type ZrTe5 are reported in temperature (T) range 2 - 340 K. Thermoelectric power (S) is positive and reaches up to 458 uV/K at 340 K on increasing T. The value of Fermi energy 16 meV, suggests…

材料科学 · 物理学 2017-09-13 M. K. Hooda , C. S. Yadav

Metallic thermoelectric materials are promising candidates for active cooling applications, where high thermal conductivity and a high thermoelectric power factor are essential to maximize effective thermal conductivity. While metals…

The iron-oxypnictide compounds, recently reported as a new class of superconductors when appropriately doped, exhibit large Seebeck coefficients, of the order of -100 microV/K, while keeping good electrical conductivity. Their power factor…

超导电性 · 物理学 2008-07-23 Loreynne Pinsard-Gaudart , David Berardan , Julien Bobroff , Nita Dragoe

In spite of intensive studies on thermoelectricity in metals, little is known about thermoelectric response in semiconductors at low temperature. An even more fascinating and unanswered question is what happens to the Seebeck coefficient…

强关联电子 · 物理学 2024-02-06 Yuna Nakajima , Yuichi Akahama , Yo Machida

Polycrystalline samples of Er$_{1-x}$Ho$_x$NiSb ($x$ = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 1) were characterized by means of x-ray powder diffraction (XRD), scanning electron microscopy (SEM), and optical metallography. The results proved the…

We present the thermoelectric (TE) properties of LaCoO$_{3}$ compound in the temperature range 300-600 K. The experimental value of Seebeck coefficient ($\alpha$) at 300 K is found to be $\sim$635 $\mu$V/K. The value of $\alpha$ decreases…

强关联电子 · 物理学 2017-04-25 Saurabh Singh , Sudhir K. Pandey

A total of 5 different half-Heusler alloys, two p-type and two n-type with the fifth a charge compensated alloy have been designed and synthesized. The thermophysical properties of these alloys have been investigated in the range 10 K to…

材料科学 · 物理学 2016-11-28 Md. Mofasser Mallik , Satish Vitta

The thermoelectric power S and the thermal conductivity k of stoichiometric and vacancy-doped CaB6 have been measured between 5 and 300 K. The thermopower of both materials is surprisingly large at room temperature. Across the whole covered…

强关联电子 · 物理学 2007-05-23 K. Gianno' , A. V. Sologubenko , H. R. Ott , A. D. Bianchi , Z. Fisk
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