相关论文: InGaAs/AlInGaAs THz Quantum Cascade Lasers operati…

We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T…

Detailed simulations for Terahertz quantum cascade lasers based on two-well designs are presented. We reproduce the maximal operation temperatures observed and attribute the degradation with temperature to the occupation of parasitic levels…

We present a \MF{terahertz} quantum cascade laser operating on a thermoelectric cooler up to a record-high temperature of 210.5 K. The active region design is based on only two quantum wells and achieves high temperature operation thanks to…

Due to their high optical phonon energies GaInP/AlGaInP heterostructures are a promising active medium to solve the problem of creating compact semiconductor sources with an operating frequency range of 5.5-7 THz. In this work, the…

Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…

We present a two-quantum well THz intersubband laser operating up to 192 K. The structure has been optimized with a non-equilibrium Green's function model. The result of this optimization was confirmed experimentally by growing, processing…

We report on the operation of a double metal waveguide far-infrared quantum cascade laser emitting at 28 $\mu$m, corresponding to the AlAs-like phonon Reststrahlen band. To avoid absorption by AlAs-like optical phonons, the Al-free group-V…

Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow…

We present GaSb-based interband cascade lasers emitting at a center wavelength of 6.12 $\mu$m at 20$^\circ$C in continuous-wave operation up to a maximum operating temperature of 40$^\circ$C. Pulsed measurements based on broad area devices…

A simple two-well design for terahertz quantum cascade lasers is proposed which is based on scattering injection and the efficient extraction of electrons from the lower laser level by resonant tunneling. In contrast to existing designs…

Because of the ultrafast and photon-driven nature of the transport in their active region, we demonstrate that quantum cascade lasers can be operated as resonantly amplified terahertz detectors. Tunable responsivities up to 50 V/W and noise…

We report on a new design of terahertz quantum cascade laser based on a single, potential-inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on…

THz quantum cascade lasers based on a novel buried cavity geometry are demonstrated by combining double-metal waveguides with proton implantation. Devices are realised with emission at 2.8 THz, displaying ultra low threshold currents of 19…

A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…

Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range…

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed…

We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…

The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The…

n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the…

Quantum Cascade Lasers (QCLs) are generally designed to avoid negative differential conductivity (NDC) in the vicinity of the operation point in order to prevent instabilities. We demonstrate, that the threshold condition is possible under…