相关论文: Afterpulsing studies of low noise InGaAs/InP singl…
The measurement of light characteristics at the single- and few photon level plays a key role in many quantum optics applications. Often photodetection is preceded with the transmission of quantum light over long distances in optical fibers…
Avalanche photodiodes (APDs) are well-suited for single-photon detection on quantum communication satellites as they are a mature technology with high detection efficiency without requiring cryogenic cooling. They are, however, prone to…
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a…
InGaAs/InP single-photon avalanche diodes (SPADs) are widely used in practical applications requiring near-infrared photon counting such as quantum key distribution (QKD). Photon detection efficiency and dark count rate are the intrinsic…
Superconducting nanostrip single-photon detectors (SNSPD) are wide-spread tools in photonic quantum technologies. Here, we study afterpulsing in commercial SNSPD made of amorphous superconducting material. We find that the probability of an…
We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using…
The non-perfect factors of practical photon-counting receiver are recognized as a significant challenge for long-distance photon-limited free-space optical (FSO) communication systems. This paper presents a comprehensive analytical…
Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication…
A sine-gated single-photon detector (SPD) intended for use in a quantum key distribution (QKD) system is considered in this paper. An "avalanche delay" effect in the sine-gated SPD is revealed. This effect consists in the appearance of an…
Superconducting nanowire single-photon detectors (SNSPDs) show near unity efficiency, low dark count rate, and short recovery time. Combining these characteristics with temporal control of SNSPDs broadens their applications as in active…
Hamamatsu Photonics introduced a new generation of their Multi-Pixel Photon Counters in 2013 with significantly reduced after-pulsing rate. In this paper, we investigate the causes of after-pulsing by testing pre-2013 and post-2013 devices…
A 2D model of an InGaAs/InAlAs single photon avalanche photodiode has been developed. The influence of the active area structure in the multiplication region on the diode's operating parameters has been studied. It was found that changing…
For the SPECTRAP experiment at GSI, Germany, detectors with Single-Photon counting capability in the visible and near-infrared regime are required. For the wavelength region up to 1100 nm we investigate the performance of 2x2 mm^2 avalanche…
Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity…
We propose and demonstrate a method to characterize a gated InGaAs single-photon detector (SPD). Ultrashort weak coherent pulses, from a mode-locked sub-picosecond pulsed laser, were used to measure photon counts, at varying arrival times…
An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change…
We present a detailed investigation of the afterpulse effect in silicon photomultipliers (SiPMs), using a dedicated structure with single-cell readout. This enables direct measurement of intrinsic device properties and observation of…
We present experimental evidence and physics-based simulations of the lock-on effect in high-voltage GaAs avalanche diodes. The avalanche triggering is initiated by steep voltage ramp applied to the diode and in-series 50 Ohm load. After…
Single-photon detectors (SPDs) are widely used in applications requiring extremely weak light detection. In the near-infrared region, SPDs based on InGaAs/InP single-photon avalanche diodes (SPADs) are the primary candidates for practical…
We present the performances of a superconducting nanowire single-photon detector (SNSPD) in an ultralow-temperature region from 16 mK to 4 K. The system detection efficiency of the SNSPD showed saturation in the bias-current and temperature…