相关论文: Comprehensive and Macrospin-Based Magnetic Tunnel …

Spin torque nano-oscillators (STNO) are nanoscale devices with wide band frequency tunability. Their multifunctional RF properties are well suited to define novel schemes for wireless communications that use basic protocols for data…

Spin torque oscillators (STOs) are emerging microwave devices that can potentially be used in spin-logic devices and the next-generation high-speed computing architecture. Thanks to their non-linear nature, STOs are easily tunable by the…

Magnetic tunnel junctions (MTJs) are key elements in practical spintronics, enabling not only conventional tasks such as data storage, transmission, and processing but also the implementation of compute-in-memory processing elements,…

Ising spin model is considered as an efficient computing method to solve combinatorial optimization problems based on its natural tendency of convergence towards low energy state. The underlying basic functions facilitating the Ising model…

A Scanning Tunneling Microscope (STM) is one of the most important scanning probe tools available to study and manipulate matter at the nanoscale. In a STM, a tip is scanned on top of a surface with a separation of a few \AA. Often, the…

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin…

We propose that a spin Hall effect driven magnetic tunnel junction device can be engineered to provide a continuous change in the resistance across it when injected with orthogonal spin currents. Using this concept, we develop a hybrid…

Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…

The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…

In this study, we developed a quantitative description of the dynamics of spin-torque vortex nano-oscillators (STVOs) through an unconventional model based on the combination of the Thiele equation approach (TEA) and data from micromagnetic…

An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach…

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…

For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an…

In this paper we present an overview of recent progress made in the understanding of the spin-torque induced magnetization dynamics in nanodevices using mesoscopic micromagnetic simulations. We first specify how a spin-torque term may be…

We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. To enable efficient modeling of analog circuits, the model is implemented in Verilog-A. By…

Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form…

Spin-orbit torque characterizations on magnetic heterostructures with perpendicular anisotropy are demonstrated on a projected vector field magnet via hysteresis loop shift measurement and harmonic Hall measurement with planar Hall…

We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power…

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and…