相关论文: Design and Development of Surface Modified p and n…
The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular…
The purpose of this paper is to apply characteristics of residual stress that causes cantilever beams to bend for manufacturing a micro-structured gas flow sensor. This study uses a silicon wafer deposited silicon nitride layers,…
We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…
We have studied high temperature thermal behavior of 1H, 1H, 2H, 2H-Perfluorooctyl-trichlorosilane (FOTS) and Octyltrichlorosilane (OTS) molecules self assembled on titanium dioxide (TiO2) nanoparticles using advanced microscopy and…
Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin Probe Force Microscopy (KPFM) and ToF-SIMS, and correlated…
Molecular self-assembly has been extensively used for surface modification of metals and oxides for a variety of applications, including molecular and organic electronics. One of the goals of this research is to learn how the electronic…
We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {\Omega}/sq…
We report on a flow velocity measurement technique based on snap-through detection of an electrostatically actuated, bistable micromechanical beam. We show that induced elecro-thermal Joule heating and the convective air cooling change the…
Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped…
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature…
Self-heating effects of picosecond optoelectronic switches based on vertical high-voltage structures with p-n-junctions (VPSS) operating in a high-frequency mode were theoretically studied for the first time. It is shown that strong…
This study has successfully demonstrated a novel self-heating formaldehyde gas sensor based on a thin film of NiO sensing layer. A new fabrication process has been developed in which the Pt micro heater and electrodes are deposited directly…
The presented work investigates a surface dielectric barrier discharge (SDBD) operated dry synthetic air as the working gas using a combination of experimental measurements and simulations. The primary objective is to characterize the…
We report fabrication and characteristics of an organic monolayer based Metal Oxide Semiconductor (MOS) device. In place of SiO2 oxide layer in the MOS configuration, we used 1H, 1H, 2H, 2H- perfluorooctyl trichlorosilane (FOTS)…
The surface conductivity is measured by a four-probe technique for pentacene and rubrene single-crystals laminated on polarized and nearly unpolarized molecular monolayers with application of perpendicular electric fields. The polarization…
We experimentally demonstrate enhanced self-phase modulation (SPM) in silicon nitride (Si3N4) waveguides integrated with 2D graphene oxide (GO) films. GO films are integrated onto Si3N4 waveguides using a solution-based, transfer-free…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
Lab-on-a-chip (LOC) forms the basis of the new-generation portable analytical systems. LOC allows the manipulation of ultralow flows of liquid reagents and multistep reactions on a microfluidic chip, which requires a robust and precise…
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios…
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the…