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We have studied the optical properties of two-dimensional (2D) Schottky photodiode heterojunctions made of chemical vapor deposited (CVD) graphene on n- and p-type Silicon (Si) substrates. Much better rectification behavior is observed from…

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible…

The hexagonal structure of graphene gives rise to the property of gas impermeability, motivating its investigation for a new application: protection of semiconductor photocathodes in electron accelerators. These materials are extremely…

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device.…

介观与纳米尺度物理 · 物理学 2021-10-12 Aniello Pelella , Alessandro Grillo , Enver Faella , Giuseppe Luongo , Mohammad Bagher Askari , Antonio Di Bartolomeo

Selenium is experiencing renewed interest as a promising candidate for the wide bandgap photoabsorber in tandem solar cells. However, despite the potential of selenium-based tandems to surpass the theoretical efficiency limit of single…

Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of…

应用物理 · 物理学 2019-04-30 Pablo G. Linares , Elisa Antolín , Antonio Martí

Thermophotovoltaic devices are energy-conversion systems generating an electric current from the thermal photons radiated by a hot body. In far field, the efficiency of these systems is limited by the thermodynamic Schockley-Queisser limit…

介观与纳米尺度物理 · 物理学 2016-07-19 Riccardo Messina , Philippe Ben-Abdallah

Nano-scaled metallic or dielectric structures may provide various ways to trap light into thin-film solar cells for improving the conversion efficiency. In most schemes, the textured active layers are involved into light trapping structures…

光学 · 物理学 2014-12-01 DongLin Wang , Gang Su

Intermediate band solar cells hold the promise of ultrahigh power conversion efficiencies using a single semiconductor junction. Many current implementations use materials with bandgaps too small to achieve maximum efficiency or use…

应用物理 · 物理学 2020-07-15 Ross Cheriton , Sharif M. Sadaf , Luc Robichaud , Jacob J. Krich , Zetian Mi , Karin Hinzer

We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity,…

介观与纳米尺度物理 · 物理学 2018-08-21 Antonio Di Bartolomeo , Giuseppe Luongo , Laura Iemmo , Filippo Giubileo

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast…

Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of…

We simulated photovoltaic characteristics of single heterojunction solar cell with Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensional solar cell capacitance simulator (SCAPS-1D). n-CdS/ZnO double buffer layer is used…

应用物理 · 物理学 2018-01-26 Goutam K Gupta , Ambesh Dixit

This study proposes a novel design of glucose sensor with enhanced selectivity and sensitivity by using graphene Schottky diodes, which is composed of Graphene (G)/Platinum Oxide (PtO)/n-Silicon (Si) heterostructure. The sensor was tested…

应用物理 · 物理学 2020-01-01 Mahmoud A. Sakr , Karim Elgammal , Anna Delin , Mohamed Serry

We present a multiscale approach for modeling an intermediate-band solar cell based on a GaAs-GaAlAs quantum dot superlattice of cubic symmetry. Our framework combines high-accuracy theoretical calculations of the superlattice band…

介观与纳米尺度物理 · 物理学 2025-11-24 Naira Petrosyan , Lilit Yeganyan , Aram Manaselyan , Vram Mughnetsyan , Vidar Gudmundsson , Albert Kirakosyan

The ideal band gap for a photovoltaic active layer for the solar spectrum is around 1.3 eV. However oxides with such values are rare. One of the most studied oxides to date as a photovoltaic active layer is the cuprous oxide Cu2O. Its band…

其他凝聚态物理 · 物理学 2022-07-08 Rémi Ndioukane , Fanta Baldé , Ndéye C. Y. Fall , Diouma Kobor , Laurence Motte

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode…

材料科学 · 物理学 2015-05-14 S. Tongay , T. Schumann , A. F. Hebard

Phosphorene, a new elemental two dimensional (2D) material recently isolated by mechanical exfoliation, holds the feature of a direct band gap of around 2.0 eV, overcoming graphene's weaknesses (zero band gap) to realize the potential…

材料科学 · 物理学 2016-12-07 Liujiang Zhou , Jin Zhang , Zhiwen Zhuo , Liangzhi Kou , Wei Ma , Bin Shao , Aijun Du , Sheng Meng , Thomas Frauenheim

Solar energy is the most convenient and reliable energy source among all renewable energy resources and an efficient photovoltaic device is required to convert this energy into utilizable energy. Different types of solar cells (SC) are…

应用物理 · 物理学 2019-08-02 Ali Imran , Deborah Eric , Muhammad Noaman Zahid , Muhammad Yousaf

Current methods for evaluating solar cell efficiencies cannot be applied to extremely thin cells where phenomena from the realm of near field optics prevail. We overcome this problem by offering a rigorous electromagnetic calculation of…

材料科学 · 物理学 2011-06-09 A. Niv , M. Gharghi , Z. R. Abrams , C. Gladden , X. Zhang