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We investigated nonequilibrium domain wall dynamics under an ac field by measuring the hysteresis loops of epitaxial ferroelectric capacitors at various frequencies and temperatures. Polarization switching is induced mostly by thermally…

材料科学 · 物理学 2015-05-18 S. M. Yang , J. Y. Jo , T. H. Kim , J. -G. Yoon , T. K. Song , H. N. Lee , Z. Marton , S. Park , Y. Jo , T. W. Noh

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be…

介观与纳米尺度物理 · 物理学 2021-10-22 N. N. Orlova , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

In accordance with recent experiments the mean-field type theories predict the presence of numerous metastable minima (states) in the rugged free-energy landscape of frustrated disordered magnets. This multiplicity of long-lived states with…

无序系统与神经网络 · 物理学 2015-05-14 P. N. Timonin

Hysteresis loops are obtained in the Ising spin-glass phase in d=3, using frustration-conserving hard-spin mean-field theory. The system is driven by a time-dependent random magnetic field H_Q that is conjugate to the spin-glass order Q,…

无序系统与神经网络 · 物理学 2009-11-13 Burcu Yücesoy , A. Nihat Berker

Frequency dependent dynamic behavior in Piezoresponse Force Microscopy (PFM) implemented on a beam-deflection atomic force microscope (AFM) is analyzed using a combination of modeling and experimental measurements. The PFM signal comprises…

材料科学 · 物理学 2015-06-25 Stephen Jesse , Arthur P. Baddorf , Sergei V. Kalinin

Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric…

材料科学 · 物理学 2020-12-08 L. Jaloustre , S. Le-Denmat , T. Auzelle , M. Azadmand , L. Geelhaar , F. Dahlem , R. Songmuang

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…

Since many years, sub-60mV/decade switching has been reported in ferroelectric FETs. However, thus far these reports have lacked full physical explanation since they typically use a negative capacitance in the ferroelectric layer to be able…

应用物理 · 物理学 2018-07-04 Jan Van Houdt , Philippe Roussel

Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric…

Two-dimensional van der Waals (2D vdW) materials that display ferromagnetism and piezoelectricity have received increased attention. Despite numerous 2D materials have so far been reported as ferromagnetic, developing an air stable and…

材料科学 · 物理学 2022-05-04 Kayahan Saritas , Nassar Doudin , Eric I. Altman , Sohrab Ismail-Beigi

Antiferroelectrics generate significant interest since their polarization versus electric field (PE) curves show typical double-hysteresis loops appealing for various applications. Unfortunately, antiferroelectrics are rare. In magnetic…

On the spin-valve-like ferromagnet/spin glass/ferromagnet (FM/SG/FM) structure, the tunneling current is dominated by resistance switch (RS) instead of the local density of states according to the conventional tunneling theory. Here we show…

We study the behavior of hysteresis loops in Finemet Fe$_{73.5}$Cu$_1$Nb$_3$Si$_{18.5}$B$_4$ thin films by using a fluxometric setup based on a couple of well compensated pickup coils. The presence of scaling laws of the hysteresis area is…

材料科学 · 物理学 2015-06-25 L Santi , L. S. Dorneles , R. L. Sommer , F. Colaiori , S. Zapperi , A. Magni , G. Durin

Single-molecule magnets (SMMs) exhibiting open hysteresis loops may potentially apply to molecule-based information processing and storage. However, the capacity to retain magnetic memory is always limited by zero-field quantum tunneling of…

We consider three mechanisms of hysteresis phenomena in alternating magnetic field: the domain wall motion in a random medium, the nucleation and the retardation of magnetization due to slow (critical) fluctuations. We construct…

材料科学 · 物理学 2009-10-31 Igor F. Lyuksyutov , Thomas Nattermann , Valery Pokrovsky

We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$…

The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…

It is thought that the proposed new family of multi-functional materials namely the ferroelectric thermoelectrics may exhibit enhanced functionalities due to the coupling of the thermoelectric parameters with ferroelectric polarization in…

Hidden spin polarization (HSP) emerges in centrosymmetric crystals where visible spin splittings in the real space can be observed because of the lack of inversion symmetry in each local sector. Starting from tight-binding models, we…

材料科学 · 物理学 2020-11-18 Shan Guan , Jun-Wei Luo

Ferromagnetism is an iconic example of a first-order phase transition taking place in spatially extended systems and is characterized by hysteresis and the formation of domain walls. In this paper we demonstrate that an extended atomic…