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Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic…

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel…

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free,…

材料科学 · 物理学 2015-06-19 Alan J. Elliot , Gary A. Malek , Rongtao Lu , Siyuan Han , Haifeng Yiu , Shiping Zhao , Judy Z. Wu

Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and…

The development of large-scale quantum processors benefits from superconducting qubits that can operate at elevated temperatures and be fabricated with scalable, foundry-compatible processes. Atomic layer deposition (ALD) is increasingly…

$Al/AlO_x/Al$-layer systems are frequently used for Josephson junction-based superconducting devices. Although much work has been devoted to the optimization of the superconducting properties of these devices, systematic studies on…

材料科学 · 物理学 2020-01-07 S. Fritz , L. Radtke , R. Schneider , M. Weides , D. Gerthsen

We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson…

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding…

Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we…

Superconducting qubits based on Al/AlOx/Al Josephson junction are one of the most promising candidates for the physical implementation of universal quantum computers. Due to scalability and compatibility with the state-of-the-art…

Josephson junctions form the core circuit element in superconducting quantum computing circuits, single flux quantum digital logic circuits, and sensing devices such as SQUIDs. Aluminum oxide has typically been used as the tunnel barrier.…

High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical…

The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices.…

材料科学 · 物理学 2019-11-27 S. Fritz , L. Radtke , R. Schneider , M. Luysberg , M. Weides , D. Gerthsen

Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson…

量子物理 · 物理学 2022-03-09 Alexander Bilmes , Serhii Volosheniuk , Alexey V. Ustinov , Jürgen Lisenfeld

A minimal method to fabricate Al/AlO$_x$/Al Josephson junctions (JJs) using photolithography and argon etching, before metallization and oxidation, is demonstrated. JJs with areas ranging from 1 to 6 $\mu$m$^2$ can be fabricated and, with…

量子物理 · 物理学 2026-04-30 Imran Mahboob , Satoshi Sasaki , Takaaki Takenaka

Microscopic inhomogeneity within superconducting films is a critical bottleneck hindering the performance and scalability of quantum circuits. All-nitride Josephson Junctions (JJs) have attracted substantial attention for their potential to…

量子物理 · 物理学 2025-12-09 Prachi Garg , Danqing Wang , Hong X. Tang , Baishakhi Mazumder

Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility…

介观与纳米尺度物理 · 物理学 2021-02-01 M. J. Cyster , J. S. Smith , N. Vogt , G. Opletal , S. P. Russo , J. H. Cole

Josephson junctions (JJs) are the key element of many devices operating at cryogenic temperatures. Development of time-efficient wafer-scale JJ characterization for process optimization and control of JJ fabrication is essential. Such…

Materials defects in Josephson junctions (JJs), often referred to as two-level systems (TLS), couple to superconducting qubits and are a critical bottleneck for scalable quantum processors. Despite their importance, understanding the…

We have developed a combined photolithography and electron-beam lithography fabrication process for sub-\mum to \mum-size Nb/Al-AlOx/Nb Josephson junctions. In order to define the junction size and protect its top electrode during anodic…

超导电性 · 物理学 2011-02-14 Christoph Kaiser , J. M. Meckbach , K. Ilin , J. Lisenfeld , R. Schäfer , A. V. Ustinov , M. Siegel
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