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相关论文: High Intrinsic Mobility and Ultrafast Carrier Dyna…

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In the present work we calculate the phonon-limited mobility in intrinsic n-type single-layer MoS2 as a function of carrier density and temperature for T > 100 K. Using a first-principles approach for the calculation of the electron-phonon…

材料科学 · 物理学 2013-11-22 Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K).…

材料科学 · 物理学 2016-12-01 Kirby K. H. Smithe , Chris D. English , Saurabh V. Suryavanshi , Eric Pop

Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical…

材料科学 · 物理学 2017-01-10 Zhihao Yu , Zhun-Yong Ong , Songlin Li , Jian-Bin Xu , Gang Zhang , Yong-Wei Zhang , Yi Shi , Xinran Wang

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer…

介观与纳米尺度物理 · 物理学 2014-03-25 Nan Ma , Debdeep Jena

The properties of two-dimensional (2D) materials have been extensively studied and applied in various applications. Our interest is to theoretically investigate the thermal transport and thermoelectric properties of the 2D transition metal…

材料科学 · 物理学 2024-02-16 Radityo Wisesa , Anugrah Azhar , Edi Suprayoga

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the…

We theoretically study the acoustic phonon limited mobility in n-doped two-dimensional MoS2 for temperatures T < 100 K and high carrier densities using the Boltzmann equation and first-principles calculations of the acoustic electron-phonon…

介观与纳米尺度物理 · 物理学 2015-03-20 Kristen Kaasbjerg , Kristian S. Thygesen , Antti-Pekka Jauho

Thermal transport property of homogeneous twisted molybdenum disulfide (MoS$_2$) is investigated using non-equilibrium molecular dynamics simulations with the state-of-art force fields. The simulation results demonstrate that the…

计算物理 · 物理学 2023-10-16 Wenwu Jiang , Ting Liang , Jianbin Xu , Wengen Ouyang

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

介观与纳米尺度物理 · 物理学 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively…

介观与纳米尺度物理 · 物理学 2015-06-12 Wenzhong Bao , Xinghan Cai , Dohun Kim , Karthik Sridhara , Michael S. Fuhrer

We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection…

材料科学 · 物理学 2015-06-15 Nardeep Kumar , Jiaqi He , Dawei He , Yongsheng Wang , Hui Zhao

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…

介观与纳米尺度物理 · 物理学 2019-07-04 Suman Sarkar , K. Lakshmi Ganapathi , Sangeneni Mohan , Aveek Bid

Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport…

介观与纳米尺度物理 · 物理学 2014-07-10 Jing Wu , Hennrik Schmidt , Amara Kiran Kumar , Xiangfan Xu , Goki Eda , Barbaros Özyilmaz

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of…

材料科学 · 物理学 2024-12-10 Jun Liu , Mengqi Fang , Eui-Hyeok Yang , Xian Zhang

The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance…

介观与纳米尺度物理 · 物理学 2019-06-11 Jianhong Xue , Shaoyun Huang , Ji-Yin Wang , H. Q. Xu
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