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We demonstrated a pressure-induced phase transition from a low-Tc phase (3.5 K) to a high-Tc phase (8.7 K) in single crystalline PrO0.5F0.5BiS2. The high-Tc phase is easily observed even at 0.7 GPa by uniaxial pressure obtained from a…

Electrical resistivity measurements on La$_{1-x}$Sm$_{x}$O$_{0.5}$F$_{0.5}$BiS$_{2}$ ($x$ = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition…

超导电性 · 物理学 2015-10-28 Y. Fang , D. Yazici , B. D. White , M. B. Maple

The newly discovered BiS$_2$-based LaO$_{1-x}$F$_{x}$BiS$_2$ ($x$=0.5) becomes superconductive at $T_c$=2.5 K. Electrical resistivity and magnetization measurements are performed under pressure to determine the pressure dependence of the…

High-quality polycrystalline samples of LaO0.5F0.5BiS2 were obtained using high-pressure synthesis technique. The LaO0.5F0.5BiS2 sample prepared by heating at 700 C under 2 GPa showed superconductivity with superconducting transition…

Electrical resistivity measurements as a function of temperature between 1 K and 300 K were performed at various pressures up to 3 GPa on the superconducting layered compounds Ln(O0.5F0.5)BiS2 (Ln = La, Ce). At atmospheric pressure,…

超导电性 · 物理学 2013-09-04 C. T. Wolowiec , D. Yazici , B. D. White , K. Huang , M. B. Maple

Measurements of electrical resistivity were performed between 3 and 300 K at various pressures up to 2.8 GPa on the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = Pr, Nd). At lower pressures, PrO0.5F0.5BiS2 and NdO0.5F0.5BiS2 exhibit…

超导电性 · 物理学 2015-06-16 C. T. Wolowiec , B. D. White , I. Jeon , D. Yazici , K. Huang , M. B. Maple

By using a hydrostatic pressure, we have successfully tuned the ground state and superconductivity in LaO0.5F0.5BiSe2 single crystals. It is found that, with the increase of pressure, the original superconducting phase with Tc about 3.5 K…

超导电性 · 物理学 2014-09-16 Jianzhong Liu , Sheng Li , Yufeng Li , Xiyu Zhu , Hai-Hu Wen

Polycrystalline Eu0.5La0.5BiS2F was synthesized by solid state reaction which crystallizes in the tetragonal CeOBiS2 structure (P4/nmm). We report here enhancement of Tc to 2.2 K in Eu0.5La0.5BiS2F (by electron doping in EuBiS2F with Tc ~…

超导电性 · 物理学 2015-10-28 Gohil S. Thakur , Rajveer Jha , Zeba Haque , V. P. S. Awana , L. C. Gupta , A. K. Ganguli

We succeed in enhancement of a superconducting transition temperature (Tc) for NdO0.7F0.3BiS2 single crystal by partial substitution of Pb for Bi. The Tc increases with increasing Pb concentration until 6%. The maximum Tczero is 5.6 K,…

超导电性 · 物理学 2015-11-17 S. Demura , Y. Fujisawa , S. Otsuki , R. Ishio , Y. Takano , H. Sakata

We report bulk superconductivity at 2.5K in LaO0.5F0.5BiSe2 compound through the DC magnetic susceptibility and electrical resistivity measurements. The synthesized LaO0.5F0.5BiSe2 compound is crystallized in tetragonal structure with space…

超导电性 · 物理学 2015-09-03 Rajveer Jha , V. P. S. Awana

We report the effect of hydrostatic pressure (0-1.97GPa) on the superconductivity of BiS2 based CeO0.5F0.5BiS2 compound. The CeO0.5F0.5BiS2 superconductor was synthesized by the solid state reaction route and the compound is crystallized in…

超导电性 · 物理学 2015-06-19 Rajveer Jha , H. Kishan , V. P. S. Awana

In this communication, we report the temperature dependence (3 to 300K) of the electrical resistivity of BiS2 based layered PrO0.5F0.5BiS2 superconductor at ambient and hydrostatic pressure of up to 3GPa. It is observed that Tc increases…

超导电性 · 物理学 2013-07-19 G. Kalai Selvan , M. Kanagaraj , Rajveer Jha , V. P. S. Awana , S. Arumugam

We report here synthesis, structural, DC magnetization, and transport studies of new BiS2 based layered LaO0.5F0.5BiS2 superconductor [1]. The sample was synthesized by conventional solid state route via vacuum encapsulation technique at…

超导电性 · 物理学 2015-06-05 V. P. S. Awana , Anuj Kumar , Rajveer Jha , Shiva Kumar , Anand Pal , Shruti , J. Saha , S. Patnaik

The temperature dependence of the ac susceptibility for single-crystalline Fe1.02Se has been measured at high pressures to 6.7 GPa. The superconducting transition temperature Tc displays a large increase from 7 K to 30 K in the two-phase…

超导电性 · 物理学 2013-05-29 V. G. Tissen , E. G. Ponyatovskii , M. V. Nefedova , A. N. Titov , V. V. Fedorenko

The evolution of pressure induced superconductivity in single crystal as well as polycrystalline samples of BaFe2As2 has been investigated through temperature dependent electrical resistivity studies in 0-7 GPa pressure range. While the…

超导电性 · 物理学 2015-05-13 Awadhesh Mani , Nilotpal Ghosh , S. Paulraj , A. Bharathi , C. S. Sundar

Through the solid state reaction method, we synthesized a new BiSe2-based superconductor Sr0:5La0:5FBiSe2 with superconducting transition temperature Tc?3.8 K. A strong diamagnetic signal below Tc in susceptibility ?(T) is observed…

超导电性 · 物理学 2016-05-02 Lin Li , Yongliang Xiang , Yihong Chen , Wenhe Jiao , Chuhang Zhang , Li Zhang , Jianhui Dai , Yuke Li

The effects of pressure on the superconducting properties of a Bi-based layered superconductor La2O2Bi3Ag0.6Sn0.4S6, which possesses a four-layer-type conducting layer, have been studied through the electrical resistance and magnetic…

We investigate the external hydrostatic pressure effect on the superconducting transition temperature (Tc) of new layered superconductors Bi4O4S3 and NdO0.5F0.5BiS2. Though the Tc is found to have moderate decrease from 4.8 K to 4.3 K…

超导电性 · 物理学 2013-07-18 G. Kalai Selvan , M. Kanagaraj , S. Esakki Muthu , Rajveer Jha , V. P. S. Awana , S. Arumugam

We report pressure-induced superconductivity in a single crystal of CaFe2As2. At atmospheric pressure, this material is antiferromagnetic below 170 K but under an applied pressure of 0.69 GPa becomes superconducting, with a transition…

超导电性 · 物理学 2008-07-18 Tuson Park , Eunsung Park , Hanoh Lee , T. Klimczuk , E D Bauer , F Ronning , J D Thompson

We have investigated the pressure effect on the newly discovered samarium doped La1-xSmxO0.5F0.5BiS2 superconductors. More than threefold increase in Tc (10.3 K) is observed with external pressure (at ~1.74 GPa at a rate of 4.08 K/GPa)) for…

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