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One of the factors limiting electron mobility in supported graphene is remote phonon scattering. We formulate the theory of the coupling between graphene plasmon and substrate surface polar phonon (SPP) modes, and find that it leads to the…

介观与纳米尺度物理 · 物理学 2015-06-05 Zhun-Yong Ong , Massimo V. Fischetti

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

介观与纳米尺度物理 · 物理学 2012-07-26 X. Hong , K. Zou , A. M. DaSilva , C. H. Ahn , J. Zhu

One of the salient features of graphene is the very high carrier mobility that implies tremendous potential for use in electronic devices. Unfortunately, transport measurements find the expected high mobility only in freely suspended…

介观与纳米尺度物理 · 物理学 2015-06-04 Søren Ulstrup , Marco Bianchi , Richard Hatch , Dandan Guan , Alessandro Baraldi , Dario Alfè , Liv Hornekær , Philip Hofmann

The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity…

材料科学 · 物理学 2015-05-13 Aniruddha Konar , Tian Fang , Debdeep Jena

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission.…

材料科学 · 物理学 2011-09-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while…

介观与纳米尺度物理 · 物理学 2015-06-04 Denis L. Nika , Alexander A. Balandin

We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first…

介观与纳米尺度物理 · 物理学 2015-05-20 Babak Fallahazad , Seyoung Kim , Luigi Colombo , Emanuel Tutuc

The aim of this work is to simulate the charge transport in a monolayer graphene on different substrates. This requires the inclusion of the scatterings of the charge carriers with the impurities and the phonons of the substrate, besides…

介观与纳米尺度物理 · 物理学 2019-05-29 Marco Coco , Armando Majorana , Giovanni Nastasi , Vittorio Romano

We theoretically study the thermoelectric transport S in a double-layer bilayer graphene (BLG-GaAs-BLG) system on dielectric substrates (h-BN, Al2O3, HfO2). Electrons interact with GaAs acoustic phonons via both the deformation potential…

介观与纳米尺度物理 · 物理学 2025-08-06 Vo Van Tai , Truong Van Tuan , Tran Trong Tai , Le Tri Dat , Nguyen Duy Vy

In this work, we present a comprehensive investigation of graphene's thermal conductivity using first-principles density functional perturbation theory calculations, with a focus on the phonon and lattice vibrational properties underlying…

材料科学 · 物理学 2024-12-25 Archishman Gupta , Ankit Arora

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6x10^7 cm/s (1.7x10^7 cm/s), and peak…

介观与纳米尺度物理 · 物理学 2013-12-02 Vincent E. Dorgan , Ashkan Behnam , Hiram J. Conley , Kirill I. Bolotin , Eric Pop

We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of…

介观与纳米尺度物理 · 物理学 2015-05-18 Vasili Perebeinos , Phaedon Avouris

The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from…

材料科学 · 物理学 2016-02-01 Denis L. Nika , Alexander A. Balandin

Graphene with high carrier mobility \mu\ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor…

介观与纳米尺度物理 · 物理学 2012-03-08 A. K. M. Newaz , Yevgeniy S. Puzyrev , Bin Wang , Sokrates T. Pantelides , Kirill I. Bolotin

Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

Understanding the mechanisms of thermal conduction in graphene is a long-lasting research topic, due to its high thermal conductivity. Peierls-Boltzmann transport equation (PBTE) based studies have revealed many unique phonon transport…

材料科学 · 物理学 2019-08-14 Xiaokun Gu , Zheyong Fan , Hua Bao , C. Y. Zhao

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…

材料科学 · 物理学 2012-05-14 Jürgen Schiefele , Fernando Sols , Francisco Guinea

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the…

材料科学 · 物理学 2009-06-10 J. -H. Chen , C. Jang , M. Ishigami , S. Xiao , E. D. Williams , M. S. Fuhrer

The quantum Hall (QH) effect in two-dimensional electron systems (2DESs) is conventionally observed at liquid-helium temperatures, where lattice vibrations are strongly suppressed and bulk carrier scattering is dominated by disorder.…

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…

介观与纳米尺度物理 · 物理学 2012-08-28 S. Das Sarma , Qiuzi Li
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