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The optical conductivity of freely suspended graphene was examined under non-equilibrium conditions using femtosecond pump-probe spectroscopy. We observed a conductivity transient that varied strongly with the electronic temperature,…

介观与纳米尺度物理 · 物理学 2013-06-20 Leandro M. Malard , Kin Fai Mak , A. H. Castro Neto , N. M. R. Peres , Tony F. Heinz

Nonlinear optical properties and carrier relaxation dynamics in graphene, suspended in three different solvents, are investigated using femtosecond (80 fs pulses) Z-scan and degenerate pumpprobe spectroscopy at 790 nm. The results…

材料科学 · 物理学 2015-05-14 Sunil Kumar , M. Anija , N. Kamaraju , K. S. Vasu , K. S. Subrahmanyam , A. K. Sood , C. N. R. Rao

The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…

介观与纳米尺度物理 · 物理学 2010-05-18 X. Li , E. A. Barry , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Optical pump-terahertz probe spectroscopy has been used to investigate ultrafast photo-induced charge carrier transport in 3.4 $\mu$m wide graphene ribbons upon scaling the optical pump intensity. For low pump fluences, the deposited pump…

材料科学 · 物理学 2026-03-02 Arvind Singh , Hynek Němec , Jan Kunc , Petr Kužel

We consider the nonlinear terahertz response of n-doped monolayer graphene at room temperature using a microscopic theory of carrier dynamics. Our tight-binding model treats the carrier-field interaction in the length gauge, includes phonon…

介观与纳米尺度物理 · 物理学 2019-03-27 L. G. Helt , M. M. Dignam

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 - 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the…

Femtosecond time-resolved spectroscopy using 400 nm-pump and 800 nm-probe in CVD-grown multilayer graphene provides strong evidence for isotropic distribution of photoexcited carrier after initial relaxation. Indicative of such isotropic…

介观与纳米尺度物理 · 物理学 2013-12-24 Xiao-Qing Yan , Zhi-Bo Liu , Jun Yao , Xin Zhao , Xu-Dong Chen , Yongsheng Chen , Jian-Guo Tian

Understanding the ultrafast dynamics of photoexcited charges in graphene is essential, as the microscopic mechanisms underlying these dynamics determine many of graphene's optical, optothermal, and optoelectronic properties. These are…

介观与纳米尺度物理 · 物理学 2026-04-02 Hai I. Wang , Xiaoyu Jia , Anand Nivedan , Mischa Bonn , Aron W. Cummings , Alessandro Principi , Klaas-Jan Tielrooij

Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…

材料科学 · 物理学 2014-10-21 Shuang Tang , Mildred S. Dresselhaus

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…

We develop a theory for density, disorder, and temperature dependent electrical conductivity of bilayer graphene in the presence of long-range charged impurity scattering as well as an additional short-range disorder of independent origin,…

介观与纳米尺度物理 · 物理学 2010-04-21 S. Das Sarma , E. H. Hwang , E. Rossi

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, $\rho_{ab}$, in graphite above room temperature. Contrary to this…

材料科学 · 物理学 2009-07-23 D. B. Gutman , S. Tongay , H. K. Pal , D. L. Maslov , A. F. Hebard

We report an optical study of charge transport in graphene. Diffusion of hot carriers in epitaxial graphene and reduced graphene oxide samples are studied using an ultrafast pump-probe technique with a high spatial resolution.…

介观与纳米尺度物理 · 物理学 2015-03-17 Brian A. Ruzicka , Shuai Wang , Lalani K. Werake , Ben Weintrub , Kian Ping Loh , Hui Zhao

We examine the photoconductivity of an intrinsic graphene associated with far- and mid-infrared irradiation at low temperatures. The model under consideration accounts for the excitation of the electron-hole pairs by incident radiation, the…

材料科学 · 物理学 2008-05-27 F. T. Vasko V. Ryzhii

Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation.…

介观与纳米尺度物理 · 物理学 2010-08-04 Oleg G. Balev , Fedir T. Vasko

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes…

介观与纳米尺度物理 · 物理学 2015-04-06 Justin C. W. Song , Leonid S. Levitov

Graphene's near-field radiative heat transfer is determined from its electrical conductivity, commonly modeled using the local Kubo and Drude formulas. In this letter, we analyze the non-locality of graphene's electrical conductivity using…

介观与纳米尺度物理 · 物理学 2022-04-06 Saman Zare , Behrad Zeinali Tajani , Sheila Edalatpour

By using the Kubo linear response theory with the Keldysh Green function approach, we investigate the mechanism leading to the negative differential transmission in system with the equilibrium electron density much smaller than the…

介观与纳米尺度物理 · 物理学 2013-12-19 B. Y. Sun , M. W. Wu

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…

材料科学 · 物理学 2009-06-12 Jian-Hao Chen , W. G. Cullen , C. Jang , M. S. Fuhrer , E. D. Williams