相关论文: Luminescence associated with stacking faults in Ga…
Light emitters based on the semiconductor alloy aluminium gallium nitride ((Al,Ga)N) have gained significant attention in recent years due to their potential for a wide range of applications in the ultraviolet (UV) spectral window. However,…
Defects in tight-binding lattices generally destroy the onset of Bloch oscillations (BOs) and the periodic self-imaging of the wave packet due to the lack of an equally-spaced Wannier-Stark ladder spectrum. Here it is shown that localized…
In this study, we present a first-principles investigation of the electronic and optical properties of gallium nitride (GaN) bilayers, focusing on the influence of interlayer sliding and spacing. In contrast to the earlier studies on…
Lattice vibrations of the wurtzite-type AlN have been studied by Raman spectroscopy under high pressure up to the structural phase transition at 20 GPa. We have shown that the widely debated bond-bending E_2^1 mode of w-AlN has an abnormal…
We investigate the topological properties of photon-dressed energy bands in bilayer $\alpha-T_{3}$ lattices under off-resonant circularly polarized light, focusing on aligned and cyclic stacking configurations. Analytical expressions for…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
We study the effects of weak point and columnar disorder on the vortex-lattice phase transitions in high temperature superconductors. The combined effect of thermal fluctuations and of quenched disorder is investigated using a simplified…
This work demonstrates the unique approach of introducing divacancy imperfections in topological Stone-Wales type defected graphene quantum dots for harvesting both singlet and triplet excitons, essential for fabricating fluorescent organic…
We present our experimental investigations on the subject of nonlinearity-modified Bloch-oscillations and of nonlinear Landau-Zener tunneling between two energy bands in a rubidium Bose Einstein condensate in an accelerated periodic…
We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn…
The photoluminescence spectra of spherical CdTe nanocrystals with zincblende structure are studied by size-selective spectroscopic techniques. We observe a resonant Stokes shift of 15 meV when the excitation laser energy is tuned to the red…
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
Quantum transport and localization are fundamental concepts in condensed matter physics. It is commonly believed that in one-dimensional systems, the existence of mobility edges is highly dependent on disorder. Recently, there has been a…
We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both…
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation…
Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in…
Thermoelectric materials are of great interest for heat energy harvesting applications. One such promising material is TlGaSe$_{2}$, a p-type semiconducting ternary chalcogenide. Recent reports show it can be processed as a thin film,…
Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D…
Embedded germanium nanocrystals (NCs) in a silica host matrix are theoretically analyzed to identify their third-order bound-state nonlinearities. A rigorous atomistic pseudopotential approach is used for determining the electronic…
Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid density-functional defect calculations. This includes the interaction between the rare-earth dopant and native point defects (Ga and N vacancies) and…