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相关论文: Photoluminescence Quenching in Single-layer MoS2 v…

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We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high…

We report up to ten-fold enhancement of the photoresponsivity of monolayer MoS$_2$ by treatment with O$_2$:Ar (1:3) plasma. We characterize the surface of plasma-exposed MoS$_2$ by TEM, Raman and PL mapping and discuss the role of MoO$_x$…

Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS$_2$. The change in the carrier concentration, surrounding…

材料科学 · 物理学 2017-08-01 Achintya Bera , D V S Muthu , A K Sood

Single-layer molybdenum disulfide ($MoS_2$) possesses significant potential for nanoscale optoelectronics, but achieving high-intensity, long-term-stable photoluminescence (PL) emission remains a challenge. In this work, we demonstrate a…

We show that strong photoluminescence (PL) can be induced in single-layer graphene on using an oxygen plasma treatment. PL characteristics are spatially uniform across the flakes and connected to elastic scattering spectra distinctly…

其他凝聚态物理 · 物理学 2010-01-07 T. Gokus , R. R. Nair , A. Bonetti , M. Bohmler , A. Lombardo , K. S. Novoselov , A. K. Geim , A. C. Ferrari , A. Hartschuh

We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual as-prepared flakes,…

材料科学 · 物理学 2012-02-22 G. Plechinger , F. -X. Schrettenbrunner , J. Eroms , D. Weiss , C. Schüller , T. Korn

In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and…

介观与纳米尺度物理 · 物理学 2014-02-04 D. Lagarde , L. Bouet , X. Marie , C. R. Zhu , B. L. Liu , T. Amand , P. H. Tan , B. Urbaszek

Transition metal dichalcogenide (TMD) materials have received enormous attention due to their extraodinary optical and electrical properties, among which MoS2 is the most typical one. As thickness increases from monolayer to multilayer, the…

Monolayer semiconducting transition metal dichalcogenides (S-TMDs) have been extensively studied as materials for next-generation optoelectronic devices due to their direct band gap and high exciton binding energy at room temperature. Under…

材料科学 · 物理学 2024-09-26 Kurt H. Tyson , James R. Godfrey , James M. Fraser , Robert G. Knobel

Ultraviolet-ozone (UV-O3) treatment is a simple but effective technique for surface cleaning, surface sterilization, doping and oxidation, and is applicable to a wide range of materials. In this study, we investigated how UV-O3 treatment…

We demonstrate the tunability of the photoluminescence (PL) properties of monolayer (1L)-MoS2 via chemical doping. The PL intensity of 1L-MoS2 was drastically enhanced by the adsorption of p-type dopants with high electron affinity, but…

材料科学 · 物理学 2015-06-16 Shinichiro Mouri , Yuhei Miyauchi , Kazunari Matsuda

The inherently low photoluminescence (PL) yields in as prepared transition metal dichalcogenide (TMD) monolayers are broadly accepted to be the result of atomic vacancies (i.e. defects) and uncontrolled doping, which give rise to…

We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance…

Two-dimensional materials such as transitional metal dichalcogenides exhibit unique optical and electrical properties. Here we report on the varying optical properties of CVD grown MoS2 monolayer flakes with different shapes. In particular,…

应用物理 · 物理学 2020-03-18 Siwei Luo , Conor P. Cullen , Gencai Guo , Jianxin Zhong , Georg S. Duesberg

Lithographically fabricated MoS2 field effect transistors suffer from several critical imperfections, including low sub-threshold swings, large turn-on gate voltages (VT), and wide device-to-device variability. The large magnitude and…

介观与纳米尺度物理 · 物理学 2016-11-22 Rohan Dhall , Zhen Li , Ewa Kosmowska , Stephen B. Cronin

We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that…

Photoluminescence (PL) of Lu$_{2}$SiO$_{5}$ crystal and ceramics with a high concentration of oxygen vacancies (about ~0.5 at.%) is studied. Oxygen vacancies were created using two ways. The first method is a growth of crystal from the…

We study molybdenum disulfide (MoS2) structures generated by folding single- and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence…

介观与纳米尺度物理 · 物理学 2016-02-05 Andres Castellanos-Gomez , Herre S. J. van der Zant , Gary A. Steele

In indirect band gap materials, phonon-assisted processes are key mechanisms for photoluminescence (PL). Using a first-principles many-body approach, we systematically investigate the phonon-assisted PL in bilayer MoS$_2$ and its dependence…

材料科学 · 物理学 2026-02-25 Gyanu P. Kafle , Zhen-Fei Liu

Methods for nanoscale material characterization are in ever-increasing demand, especially those that can provide a broader range of information at once. Near-field techniques based on combinations of scanning probe microscopy (SPM) and…

应用物理 · 物理学 2020-11-11 Alvaro Rodriguez , Tim Verhagen , Martin Kalbac , Jana Vejpravova , Otakar Frank
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