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相关论文: Superconducting tantalum nitride-based normal meta…

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We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…

超导电性 · 物理学 2013-09-27 S. Chaudhuri , M. R. Nevala , I. J. Maasilta

We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…

介观与纳米尺度物理 · 物理学 2012-09-18 M. R. Nevala , S. Chaudhuri , J. Halkosaari , J. T. Karvonen , I. J. Maasilta

We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…

We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…

介观与纳米尺度物理 · 物理学 2017-08-23 Juhani Julin , Ilari Maasilta

We report the superconducting properties of tantalum nitride (TaN) nanowires and TaN/copper (TaN/Cu) bilayer nanowires fabricated on 300 mm silicon wafers using CMOS-compatible processes. We evaluate how an integrated Cu heatsink modifies…

We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…

介观与纳米尺度物理 · 物理学 2012-02-01 S. Chaudhuri , I. J. Maasilta

We report a Nb/Al-AlN /Nb superconducting tunnel junction process in which the AlN barrier is formed by plasma nitridation using a compact microwave electron-cyclotron-resonance (ECR) nitrogen plasma source integrated into a standard…

We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson…

We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal-insulating- superconducting or superconducting-insulating-superconducting tunnel junctions. We use atomic layer depo- sition and an…

超导电性 · 物理学 2013-03-28 Stephanie M. Moyerman , Guangyuan Feng , Lisa Krayer , Nathan Stebor , Brian G. Keating

High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated…

介观与纳米尺度物理 · 物理学 2008-06-03 T. Zijlstra , C. F. J. Lodewijk , N. Vercruyssen , F. D. Tichelaar , D. N. Loudkov , T. M. Klapwijk

Nitride-based superconductors represent a family of superconducting thin film materials displaying higher quality than their corresponding bare superconductor when used in devices for applications such as cosmic radiation sensing. In recent…

We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on…

超导电性 · 物理学 2013-09-27 Saumyadip Chaudhuri , Lucie Chandernagor , Manu Lahtinen , Marion Ging , Ilari Maasilta

We report on the fabrication and electrical transport properties of superconducting junctions made of \beta-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the…

介观与纳米尺度物理 · 物理学 2020-10-06 Jihwan Kim , Bum-Kyu Kim , Hong-Seok Kim , Ahreum Hwang , Bongsoo Kim , Yong-Joo Doh

Tunnel junctions are one of the key elements of chip-scale microsystems serving various technologies from classical microelectronics to quantum information. Aluminium and its oxide (AlOx) have dominated cryogenic tunnel junction technology…

Micro-refrigerators that operate in the sub-kelvin regime are a key device in quantum technology. A well-studied candidate, an electronic cooler using Normal metal - Insulator - Superconductor (NIS) tunnel junctions offers substantial…

介观与纳米尺度物理 · 物理学 2016-11-30 H. Q. Nguyen , J. T. Peltonen , M. Meschke , J. P. Pekola

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding…

When biased at a voltage just below a superconductor's energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focussed to structures of submicron size and…

介观与纳米尺度物理 · 物理学 2016-12-21 H Courtois , Hung Q. Nguyen , Clemens Winkelmann , J. P. Pekola

A theory of tunneling conductance spectra for normal metal/insulator/Sr$_{2}$RuO$_{4}$ junction is studied theoretically. We assume several types of pair potentials with triplet symmetries that are promising candidates for…

超导电性 · 物理学 2009-10-30 Masashi Yamashiro , Yukio Tanaka , Satoshi Kashiwaya

Since the discovery of the unconventional copper-oxide high-transition-temperature superconductors (HTS), researchers have explored many methods to fabricate superconducting tunnel junctions from these materials for both superconducting…

超导电性 · 物理学 2014-09-18 Shane A. Cybart , E. Y. Cho , T. J. Wong , Björn H. Wehlin , Meng K. Ma , Chuong Huynh , R. C. Dynes

We propose a new type of a transition edge sensor based on an Al/AlOx/Ti/AlOx/Al superconductor - insulator - superconductor - insulator - superconductor (SIS'IS) structure. It exhibits sharp dependence of zero bias resistance on…

介观与纳米尺度物理 · 物理学 2014-09-03 Timothé Faivre , Dmitry Golubev , Jukka P. Pekola
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