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Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements endowed the treated silicon with a strong…

材料科学 · 物理学 2015-09-30 Ke-Fan Wang , Hezhu Shao , Kong Liu , Shengchun Qu , Yuanxu Wang , Zhanguo Wang

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and…

Hyperdoped metastable sulfur atoms endow crystalline silicon with a strong sub-bandgap light absorption. In order to explore such metastable states, we develop a new high-throughput first-principles calculation method to search for all of…

材料科学 · 物理学 2016-11-17 Ke-Fan Wang , Mingguo Liu , Yaping Ma , Zhenxiang Cheng , Yuanxu Wang , Xudong Xiao

The electronic and optical properties of low-dimensional semiconductors are typically quite different from those of their bulk counterparts. Yet, the optical gap of two-dimensional copper antimony disulfide (CuSbS$_2$) does not dramatically…

介观与纳米尺度物理 · 物理学 2021-08-24 Kevin M. Conley , Caterina Cocchi , Tapio Ala-Nissila

Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis…

Future laser-interferometric gravitational wave detectors (GWDs) will potentially employ test mass mirrors from crystalline silicon and a laser wavelength of $1550\,\rm{nm}$, which corresponds to a photon energy below the silicon bandgap.…

光学 · 物理学 2015-06-18 Jessica Steinlechner , Alexander Khalaidovski , Roman Schnabel

We have measured the reflectivity spectra of the iron based superconductor LiFeAs (Tc = 17.6 K) in the temperature range from 4 to 300 K. In the superconducting state (T < Tc), the clear opening of the optical absorption gap was observed…

We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…

We investigate the electronic properties of the tetragonal FeS superconductor by using scanning tunneling microscope/spectroscopy. It is found that the typical tunneling spectrum on the top layer of sulfur can be nicely fitted with an…

超导电性 · 物理学 2016-08-03 Xiong Yang , Zengyi Du , Guan Du , Qiangqiang Gu , Hai Lin , Delong Fang , Huan Yang , Xiyu Zhu , Hai-Hu Wen

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…

We present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $\mu$m by adjusting the free…

We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\,…

Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…

A high quality amorphous silicon (a-Si) nanostructures has grown experimentally to study the origin of light emission and the quantum confinement effect in a-Si. The quantum confinement effect increases the band gap of material as the size…

材料科学 · 物理学 2016-08-09 K. M. Liu , Setianto

In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the…

介观与纳米尺度物理 · 物理学 2009-10-31 Shouvik Datta , K. L. Narasimhan

Because of its low-cost, silicon is the standard material for photovoltaic conversion. Yet, its band-edge absorption spectrum is narrower than the spectrum of the solar radiation, which reduces its conversion efficiency. In this paper, it…

应用物理 · 物理学 2019-06-13 Valerio Apicella , Teslim Ayinde Fasasi , Antonio Ruotolo

We predict that electron-doped silicene is a good two-dimensional electron-phonon superconductor under biaxial tensile strain by first-principles calculations within rigid band approximation. Superconductivity transition temperature of…

超导电性 · 物理学 2013-11-27 Wenhui Wan , Yanfeng Ge , Fan Yang , Yugui Yao

Following our previous investigations on superconductivity in amorphous carbon (aC) based systems; we have prepared thin composite aC-W films using electron-beam induced deposition. The films did not show any sign for superconductivity…

超导电性 · 物理学 2013-01-24 I. Felner , O. Wolf , O. Millo

Since thin-film silicon solar cells have limited optical absorption, we explore the effect of a nanostructured back reflector to recycle the unabsorbed light. As a back reflector we investigate a 3D photonic band gap crystal made from…

Based on ab initio density-functional-theory using generalized gradient approximation, we systematically study the optical and electronic properties of the insulating dense sodium phase (Na-hp4) reported recently [Ma \textit{et al.}, Nature…

材料科学 · 物理学 2015-05-18 Dafang Li , Hanyu Liu , Bao-Tian Wang , Hongliang Shi , Shao-Ping Zhu , Jun Yan , Ping Zhang
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